Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K
J Zhang,W Cui,M Juda,D McCammon,RL Kelley,SH Moseley,CK Stahle,AE Szymkowiak
DOI: https://doi.org/10.1103/physrevb.57.4472
1998-01-01
Abstract:We have studied non-Ohmic effects In hopping conduction in moderately compensated ion-implanted Si:P, B (both n- and p-type) and neutron-transmutation-doped Ge:Ga,As over the temperature range 0.05-0.8 K and up to moderately strong electric fields. In the limit of small fields, where the current is proportional to applied voltage, the resistivities of these materials are approximated over a wide temperature range by the model of variable range hopping with a Coulomb gap: rho=rho(o) exp(T-o/T)(1/2). The samples included in this study have characteristic temperatures T-o in the range 1.4-60 K for silicon, and 22-60 K for germanium. We have compared our data to exponential and "hyperbolic-sine" field-effect models of the electrical nonlinearity: rho(E)=rho(0)e(-x) and rho(E)=rho(0)x/sinh(x), where x=eEl/kT, and to an empirical hot-electron model. The exponential field-effect model tends to be a good representation for the samples with high T-o at low T. The sinh model can match the data only at low fields. The hot-electron model fits our data well over a wide range of power in the low-T-o-high-T regime. We discuss the quantitative implications of these results for the application of these materials as thermometers for microcalorimeters optimized for high-resolution spectroscopy. [S0163-1829(98)05208-4].