Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Charge-State-Dependent Diffusion And Carrier-Emission-Limited Drift Of Iron In Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Lithium Diffusion in Silicon and Induced Structure Disorder: A Molecular Dynamics Study

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Iron Precipitation in Crystalline Silicon

Evolution of secondary defects in arsenic implanted Si

Low Temperature Iron Gettering by Grown-in Defects in P-Type Czochralski Silicon

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

Anab Initiostudy on the Effect of Iron Atom Junction on Transport Characteristics of Carbon–silicon Mixed Chain

Electric Field Accelerating Interface Diffusion in Cu∕Ru∕TaN∕Si Stacks During Annealing

Investigation of Iron Impurity Gettering at Dislocations in a SiGe/Si Heterostructure

Thermal behavior of iron in 6H-SiC: Influence of He-induced defects

Si:Fe Solid Solution Heavily Doped with Fe Prepared by Technique of Low Energy Ion Beam

Electrical Property Of Iron-Related Defects In N-Type Dislocated Czochralski Silicon Crystal Used For Solar Cells

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Study Of Charge Diffusion At The Carbon Nanotube-Sio2 Interface By Electrostatic Force Microscopy

Iron Precipitation in As-Received Czochralski Silicon During Low Temperature Annealing