Abstract:X-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. The lattice parameters parallel and perpendicular to the surface are determined from the grazing angle and ordinary x-ray diffraction spectra. A 1.2% lattice constant expansion parallel to the interface and a 3.1% lattice expansion along the growth direction, as compared with the Si lattice, are found within the Ge dots. Based on the Poisson equation and the Vegard law, the Ge dot should be a partially strain relaxed SiGe alloy with the Ge content of 55%. The composition change in Ge dots is suggested to be caused by the atomic intermixing during the islanding growth. In the small grazing angle x-ray diffraction spectrum, a peak located at the higher angle side of Si(220) is observed. The origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain is induced by the formation of Ge dots and leads to a -0.8% lattice constant change parallel to the interface. (C) 2000 American Institute of Physics. [S0003-6951(00)04123-1].

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure

Splitting of X-Ray Diffraction Peak in (ge : Sio2)/Sio2 Multilayers

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure

Interface Interdiffusion Intensified by Formation of Quantum Dots

Optical properties of Ge/Si quantum dot superlattices

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Short-Range Order Structures of Self-Assembled Ge Quantum Dots Probed by Multiple-Scattering Extended X-Ray Absorption Fine Structure

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

A double-crystal XRD study of Ge/Si short period superlattice

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Growth of Ge-Si strained layers and DC XRD study on epitaxial films