Abstract:Substrates with controlled surface morphologies are used to quantify the kinetics of surface mass transport during Stranski-Krastanov growth of epitaxial nanostructures. Morphologies are modified by laser texturing; tightly focused nanosecond laser pulses are used to produce micron-scale dimples on the surface of Si(001) substrates. The areal densities of three-dimensional Ge islands formed by chemical vapor deposition on these modified substrates is measured by atomic force microscopy for a wide range of Ge coverages (3-10 ML), temperatures (500<T<700 degreesC), and deposition rates (0.003<F<0.3 ML s(-1)). Island nucleation is enhanced at the vicinal surfaces surrounding the rim of the laser dimples, and, as a consequence, a denuded zone with a reduced island density surrounds each dimple. The width of the denuded zone can be as large as 50 times the island spacing and is created by extensive mass transport during the formation of the wetting layer. Mass transport is driven by chemical-potential gradients associated with the wetting-layer thickness, substrate vicinality, and the elastic relaxation of three-dimensional islands. We find excellent agreement between the data and a one-dimensional model calculation of diffusion and nucleation; the fit to the model gives a transport rate of Dn(0)approximate to1.5x10(5) s(-1) at 600 degreesC and an activation energy E-f+E(m)approximate to1.3 eV.

DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

X-ray Study of Strain and Composition of Si∕Ge0.85Si0.15(111) Islands Grown in Volmer-Weber Mode

Extracting Composition and Alloying Information of Coherent Ge(Si)/Si(001) Islands from [001] On-Zone Bright-Field Diffraction Contrast Images

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Study of Si and Ge growth on Si(100) surface

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Strain Evolution In Coherent Ge/Si Islands

Structural characterization of Mo/Si multilayer by grazing incidence X-ray diffraction

A double-crystal XRD study of Ge/Si short period superlattice

Composition and Its Impact on Shape Evolution in Dislocated Ge(Si)/Si Islands

Splitting of X-Ray Diffraction Peak in (ge : Sio2)/Sio2 Multilayers

Investigation of Composition in Nano-Scaled Self-Assembled Sige Islands

Effect of Interlayer Strain Interaction on the Island Composition and Ordering in Ge/Si(001) Island Superlattices

Surface Mass Transport and Island Nucleation During Growth of Ge on Laser Textured Si(001)

Critical Layer Thickness in Stranski-Krastanow Growth of Ge on Si(001)

The growth and investigation of SiGe films on buried Ge islands

Effect of Growth Rate on the Spatial Distributions of Dome-Shaped Ge Islands on Si(001)

Structural Investigation of the So-Called Ca/Si(111)-(5× 1) Surface

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering