Abstract:In this paper, high-frequency electrothermal characteristics of the power delivery network (PDN) are investigated for through-silicon-via (TSV)-based 3-D ICs by utilizing a self-developed electrothermal co-simulation solver. The solver circularly solves the full-wave electromagnetic equation and the steady heat conduction equation using the finite-element method. The preconditioned biconjugate gradient method combined with the element-by-element approximate factorization method is employed to speed up the simulation and save memory cost. Based on the solver, the impacts of the excitation condition and dielectric loss tangent are analyzed for a one-chip power grid, while the influence of TSV location is studied for a two-chip PDN structure. In the modeling, both the conductor and dielectric losses are taken into account, and the temperature dependence of material parameters is treated appropriately. As results, PDN impedance and self-heating-induced temperature rise are emphatically analyzed in a wide frequency range, and the electric field and temperature distributions of several resonance modes are presented. The results would be beneficial for the design and thermal management of 3-D PDNs.

Electromagnetic Susceptibility Analysis Method for 3D TSV ICs

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

A Novel Integrated Approach for Simulation of Electromagnetic Susceptibility Problem

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

Modeling of a Pair of Annular Through Silicon Vias (TSV)

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

A Systematic Coupled Approach For Electromagnetic Susceptibility Analysis Of A Shielded Device With Multilayer Circuitry

Electromagnetic Susceptibility Analysis In Device Level With Numerical Technique Based On Electric Field Integral Equation

Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Capacitive coupling analysis of TSV array in 3D packaging

An Efficient Method for Comprehensive Modeling and Parasitic Extraction of Cylindrical Through-Silicon Vias in 3d Ics

Electromagnetic Noise Coupling Analysis of TSV Array by Using Cylindrical Mode Expansion Method

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit