Abstract:Optimizing the light‐emitting efficiency of silicon quantum dots (Si QDs) has been recently intensified by the demand of the practical use of Si QDs in a variety of fields such as optoelectronics, photovoltaics, and bioimaging. It is imperative that an understanding of the optimum light‐emitting efficiency of Si QDs should be obtained to guide the design of the synthesis and processing of Si QDs. Here an investigation is presented on the characteristics of the photoluminescence (PL) from hydrosilylated Si QDs in a rather broad size region (≈2–10 nm), which enables an effective mass approximation model to be developed, which can very well describe the dependence of the PL energy on the QD size for Si QDs in the whole quantum‐confinement regime, and demonstrates that an optimum PL quantum yield (QY) appears at a specific QD size for Si QDs. The optimum PL QY results from the interplay between quantum‐confinement effect and surface effect. The current work has important implications for the surface engineering of Si QDs. To optimize the light‐emission efficiency of Si QDs, the surface of Si QDs must be engineered to minimize the formation of defects such as dangling bonds at the QD surface and build an energy barrier that can effectively prevent carriers in Si QDs from tunneling out.

Bright Luminescence in Amorphous Hydrogenated Silicon-Nitride Quantum-Dot Films Prepared by A Special Designed Pecvd System

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

A Luminescent Si Quantum Dots Films - Preparation And Characterization

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Visible Photoluminescence in Crystallized Amorphous Sih/Sinxh Multiquantum-Well Structures

Visible electroluminescence from crystallized a-Si:H/a-SiNx:H multiquantum well structures

Optimum Quantum Yield of the Light Emission from 2 to 10 Nm Hydrosilylated Silicon Quantum Dots

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Dynamics of High Quantum Efficiency Photoluminescence from N-Si-O Bonding States in Oxygenated Amorphous Silicon Nitride Films

Electroluminescense and photoluminescense of nano-crystalline Si:H films

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers