Abstract:Silicon carbide (SiC) is considered as one of the most promising structural and coating materials for advanced nuclear applications, due to its low neutron capture cross section and excellent irradiation resistance. The difference in swelling behavior between monocrystalline and polycrystalline SiC is experimentally investigated by heavy ion irradiation at room temperature (RT). In this work, single crystal hexagonal (6H) SiC and polycrystalline chemically vapor-deposited (CVD) SiC are irradiated by 1.5 MeV Si ions with the fluences of 11014-21016 cm-2 and 11015-21016 cm-2, respectively, at RT. The step height of irradiation swelling is measured by a white light interferometer and the lattice expansion of the damage layer is characterized by using X-ray diffraction (XRD) spectrometry, in addition, the actual irradiation swelling is obtained by dividing the height of swelling step by the depth of damage layer. The XRD profiles show that the lattice expansion in the damage layer increases with the increase of irradiation fluence, and the new diffraction peak relating to the lattice structure of damage layer disappears in a fluence of 21015 cm-2, which means that the damage layer is completely amorphous at this time and the threshold dose of amorphization at RT in single crystal 6H-SiC is less than 0.8 dpa. The direct-impact model is used to fit the swelling step heights of CVD SiC and 6H-SiC irradiated by 1.5 MeV Si, and the swelling results show that the amorphization threshold dose of polycrystalline CVD SiC is larger than that of single crystal 6H-SiC. In the present work, three distinct stages are found in the heavy-ion irradiation swellings between monocrystalline and polycrystalline SiC. i.e., low-fluence region, intermediate-fluence region, and high-fluence region stage. 1) In the low-fluence region, the swellings are similar to each other, since the swelling is mainly contributed to by point defects in this region, and the micron sized grains in polycrystalline CVD SiC are of single crystal structure. 2) In the intermediate-fluence region, the irradiation swelling of the polycrystalline CVD SiC is smaller than that of the single crystal 6H-SiC, since the irradiation-induced amorphousness in polycrystalline CVD SiC is relatively hard to occur due to the existence of grain boundary in this region. 3) The irradiation swellings of 6H-SiC and CVD SiC are almost the same at the high-fluence region stage, since the irradiation swelling is caused by amorphization in this region, and the swelling depends on the difference between densities before and after irradiation. In addition, in the irradiation swelling analysis of SiC materials, XRD swelling measurement method is suitable for irradiation swelling induced by point defects, especially for neutron irradiation experiments.

Ion Irradiation Induced Nucleation and Growth of Nanoparticles in Amorphous Silicon Carbide at Elevated Temperatures

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Hardness variation in nanocrystalline SiC irradiated with heavy ions

Crystalline-to-amorphous Transition in Silicon Carbide under Neutron Irradiation

Comparative Study of Irradiation Swelling in Monocrystalline and Polycrystalline Silicon Carbide

Investigation of the damage behavior in SiC without any additives irradiated with Si ions by GIXRD, Raman and TEM

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Modifications of SiC under high fluence Kr-ion irradiation at different temperatures

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Microstructural and Elemental Evolution of Polycrystalline Α-Sic Irradiated with Ultra-High-fluence Helium Ions Before and after Annealing

Investigation of Swelling Induced by Heavy Ion and Neutron Irradiation in SiC

Ion-irradiation effect on swelling and microstructure of BN particle dispersed liquid phase sintering SiC

Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

Driving mechanism of neutron-irradiation-induced amorphization in silicon carbide

Grain boundary effects on chemical disorders and amorphization-induced swelling in 3C-SiC under high-temperature irradiation: from atomic simulation insight

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

High-flux Ion Irradiation with Energy of ∼20ev Affecting Phase Segregation and Low-Temperature Growth of Nc‐tin∕a‐si3n4 Nanocomposite Films

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing