Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Characterization and Analysis of Diode-String ESD Protection in 28nm CMOS by VFTLP

Temperature Dependence of Diode and Ggnmos ESD Protection Structures in 28nm CMOS

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Improvement on Diode String Structure for 65-Nm RF ESD Protection

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

A comparison study of DTSCR by TCAD and VFTLP for CDM ESD protection

New Electrostatic Discharge Protection Device for VBO High Speed Chip

An Overview of ESD Protection in Nanometer IC

Circuit-level ESD Protection Simulation Using Behavior Models in 28nm CMOS

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Experimental Investigation of ESD Protection for a 22-Nm FD-SOI Process