Experimental Investigation of ESD Protection for a 22-Nm FD-SOI Process

Xiaotian Chen,Yize Wang,Yuan Wang

DOI: https://doi.org/10.23919/ieds48938.2021.9468869

2021-01-01

Abstract:To study the electrostatic discharge (ESD) characteristics of the full-depleted silicon-on-isolation (FD-SOI) device, some ESD structures are fabricated in a 22-nm FD-SOI process. The DC and TLP experimental testing have been fulfilled and investigated.

What problem does this paper attempt to address?

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Kehan ZHU,Xiaoyang DU,Zongguang YU,Yan HAN,Qiang CUI,Mingxu HUO,Shurong DONG

DOI: https://doi.org/10.3969/j.issn.1000-3819.2009.01.023

2009-01-01

Abstract:Field oxide devices (FOD) based ESD (Electrostatic discharge) protection devices are investigated in this paper. According to different protected parts of IC chip such as input, output and power rails, three main FOD devices are fabricated in 0.18μm EEPROM silicide CMOS technology. By using TLP tester, the effects of the feature size on FOD's ESD characteristics and its design rule are analyzed. Results show that channel length and the distance between drain and contact (DCG) play a vital role. With increasing the channel length, trigger voltage is enhanced, but ESD robustness is weakened. Increasing DCG can enhance FOD ESD protection ability. A floating square poly island FOD is presented in this paper, which shows a simple structure and good ESD protection ability.
Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Xiaoyang Du,Shurong Dong,Yan Han,Juin J. Liou,Mingxu Huo,You Li,Qiang Cui,Dahai Huang,Demiao Wang

DOI: https://doi.org/10.1016/j.microrel.2008.04.005

IF: 1.6

2008-01-01

Microelectronics Reliability

Abstract:Electrostatic discharge (ESD) protection design is challenging for RF integrated circuits (ICs) because of the trade-off between the ESD robustness and parasitic capacitance. ESD protection devices are fabricated using the 0.18-μm RF CMOS process and their RF ESD characteristics are investigated by the transmission line pulsing (TLP) tester. The results suggest that the silicon controlled rectifier (SCR) is superior to the diode and NMOS from the perspective of ESD robustness and parasitic, but the SCR nevertheless possesses a longer turn-on time.
Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

S. Dong,X. Du,Y. Han,M. Huo,Q. Cui,D. Huang

DOI: https://doi.org/10.1049/el:20081073

2008-01-01

Electronics Letters

Abstract:Because of its simple structure and snapback characteristics, the grounded-gate NMOS (GGNMOS) has been widely used as an electrostatic discharge (ESD) protection device. ESD performance of GGNMOS fabricated in the 65 nm CMOS process is investigated, and measurement results for the snapback behaviour, failure current I-t2, holding voltage, and trigger voltage of such advanced MOS devices are illustrated. The effects of four key GGNMOS parameters, channel length, finger number, drain-to-gate spacing and source-to-gate spacing on the ESD performance, are considered, and optimal MOS structures for robust ESD protection applications are suggested.
Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

f M,LIANG Hailian,DONG Shurong

DOI: https://doi.org/10.3969/j.issn.1000-3819.2013.03.019

2013-01-01

Abstract:Based on the bi-directional silicon controlled rectifier(SCR),two novel electrostatic discharge(ESD) protection devices have been proposed,which can prevent ESD stresses on both the positive and the negative directions.While the conventional dual-direction SCR ESD protection device is usually triggered by the avalanche breakdown between N-well and P-well,the two proposed devices use the embedded NMOS/PMOS as the triggering structure to decrease the trigger voltage.Both the modified structures are implemented in a 0.18 μm RF CMOS process and examined by the transmission line pulse testing system.Experimental results indicate that the proposed devices have lower trigger voltage,smaller leakage current(~nA),a protection level passing 2 kV of human body model,and a high holding voltage(>3.3 V),making them immune to the latch-up in 1.8 V or 3.3 V I/O ESD protection applications.
Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Fanzhi Kong,Wenyan Yin,Junfa Mao,Qinghuo Liu

DOI: https://doi.org/10.1109/EDAPS.2008.4736026

2008-01-01

Abstract:Electro-thermo-mechanical transient investigation on multi-layer high-density interconnects in the presence of an ESD pulse is carried out using hybrid nonlinear time-domain finite element method (FEM). The pre-conditioned conjugated gradient technique (PCG) is combined with the element-by-element FEM so as to enhance our numerical analysis, where the temperature dispersion effects of electrical conductivity, thermal conductivity, coefficient of thermal expansion, and Young's modulus of the materials involved are all taken into account. Parasitic studies are performed to show time-dependent von Mises stress responses of some typical interconnects as the injection of an ESD current pulse, which can be fabricated using advanced semiconductor technologies, such as 90-, 60, and even 45-nm CMOS, etc.
Electrothermal characterization of SOI FinFETs

Peng Zhang,W.Q. Chen,Jun Hu,Wen-Yan Yin

DOI: https://doi.org/10.1109/IMWS-AMP.2016.7588321

2016-01-01

Abstract:Electrothermal characterization of the advanced SOI FinFETs is performed in this paper, which is based on some analytical equations as well as in-house developed finite difference algorithm. The temperature-dependent properties of thermal conductivities of all materials involved are considered in our simulation, with results validated by the commercial software ANSYS and other analytical solution. The self-heating effects (SHE) in such FinFET at 50nm node are further investigated, and some analytical equations are derived for fast predicting the maximum temperature in its channel. On the other hand, transient temperature response under the circuit-speed random stress is also studied, which is mimicked by the Pseudo Random Binary Sequence signal. It is found that the AC and PRBS signals introduce the similar transient temperature response, while the lower frequency signal induces the worse self-heating effect.
Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Yan-Bing Shi,Wen-Yan Yin,Jun-Fa Mao,Peiguo Liu,Qing Huo Liu

DOI: https://doi.org/10.1109/temc.2009.2017026

IF: 2.036

2009-01-01

IEEE Transactions on Electromagnetic Compatibility

Abstract:Comprehensive electrothermal analysis of multilevel interconnects under electrostatic discharge (ESD) stress is carried out using the proposed nonlinear time-domain finite-element method (FEM). The technological, structural, and material parameters used in the analysis correspond to the advanced CMOS process of 90-, 65-, 45, and 32-nm nodes assessed by the International Technology Roadmap for Semiconductors. In order to enhance the computation efficiency and to reduce the memory cost, the preconditioned conjugated gradient technique combined with the element-by-element approximate factorization method is introduced to handle the sparsematrices formed by FEM. The nonlinear material parameters including the temperature-dependent electrical and thermal conductivities are treated rigorously. The transient temperature distributions, the maximum temperatures, and the temperature rise time of 3- and 4-level interconnect structures under the injection of ESD pulses with various waveforms are obtained and discussed.
On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

H. Wong,S. Dong,Z. Chen

DOI: https://doi.org/10.1109/miel.2019.8889652

2019-01-01

Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.
A Novel Gate-Coupled NMOS (gcnmos) for FD-SOI ESD Protection

Xiaotian Chen,Yuan Wang,Lizhong Zhang,Ru Huang

DOI: https://doi.org/10.23919/emctokyo.2019.8893661

2019-01-01

Abstract:A novel gate-coupled NMOS (gcNMOS) structure for electrostatic discharge (ESD) protection is proposed in this paper, which can be realized in an advanced 22-nm full-depleted silicon-on-isolation (FD-SOI) technology. The triggering voltage of the proposed device structure can be adjusted to meet different ESD requirements. This innovative configuration is characterized by the resistance used to connect the gate and the ground as well as the double-well under the buried oxide (BOX), which can alter the gate potential and the electron density of the channel. Compared with previous structures, the triggering voltage of the proposed structure can range in a large scale without additional silicon consumption.
Z2-FET: A Promising FDSOI Device for ESD Protection

Yohann Solaro,Jing Wan,Pascal Fonteneau,Claire Fenouillet-Beranger,Cyrille Le Royer,Alexander Zaslavsky,Philippe Ferrari,Sorin Cristoloveanu

DOI: https://doi.org/10.1016/j.sse.2014.04.032

IF: 1.916

2014-01-01

Solid-State Electronics

Abstract:In this work, the use of the Z2-FET (Zero subthreshold swing and Zero impact ionization FET) for Electro-Static Discharge (ESD) protections is demonstrated. The device, fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator technology, features an extremely sharp off-on switch and an adjustable triggering voltage (Vt1). The principle of operation, relying on the modulation of electron and hole injection barriers, is reviewed. The impact of process modules and design parameters on electrical characteristics is analyzed with TCAD simulations, showing that very low leakage current (Ileak) and triggering capability adapted to local protection schemes are achievable. Experimental results validate the possible use of this device as an ESD protection in the 28nm FDSOI technology.
Ggnmos As Esd Protection in Different Nanometer Cmos Process

Weihuai Wang,Shurong Dong,Lei Zhong,Jie Zeng,Zhihui Yu,Zhiwei Liu

DOI: https://doi.org/10.1109/edssc.2014.7061085

2014-01-01

Abstract:Grounded-gate NMOS (GGNMOS) plays a more important role in electrostatic discharge (ESD) protection because of its simple structure and low trigger voltage. Various GGNMOS based on 90nm, 65nm and 40nm CMOS process are compared to investigate its ESD characteristic changes with process advancing. Results show that the key parameters, including channel width and length, have great influence on its ESD metrics.
Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Fei Ma,Yan Han,Shurong Dong,Meng Miao,Jianfeng Zheng,Jian Wu,Cheng-gong Han,Kehan Zhu

DOI: https://doi.org/10.1016/j.microrel.2011.11.011

IF: 1.6

2011-01-01

Microelectronics Reliability

Abstract:This paper presents device optimization and physical analysis based on gate-grounded NMOS (GGNMOS) and n-channel lateral DMOS (nLDMOS) devices manufactured in a 0.35μm 5V/30V high-voltage BCD process. The multiple body pick-up technique has been investigated in detail for the GGNMOS, and the robustness and effectiveness of the LDMOS device is optimized by tuning the drain contact to gate space (DCGS) and increasing the body resistance. Finally, the trigger voltage walk-in effect is observed for the nLDMOS device and is studied by comprehensive simulation and TLP tests.
Robustness-Improved ESD Protection Devices with Low Leakage Using Middle Silicon Layer in Double SOI Technology

Cheng Zhang,Xiaojing Li,Fanyu Liu,Jiangjiang Li,Siyuan Chen,Yuchong Wang,Juanjuan Wang,Jiantou Gao,Jing Wan,Sorin Cristoloveanu,Zhengsheng Han,Bo Li,Tianchun Ye

DOI: https://doi.org/10.1109/ted.2024.3389940

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:A novel implementation for electrostatic discharge (ESD) protection is demonstrated, which involves two structures named MOSFET in parallel with diode (MOS-DIO) and MOSFET in parallel with silicon-controlled rectifier (MOS-SCR). The fabricated structures exhibit enhanced robustness enabled through the double silicon-on-insulator (DSOI) technology. The implementation combines a MOSFET in the top silicon film with a diode or a silicon-controlled rectifier (SCR) located in the middle silicon layer. Transmission line pulse (TLP) experiments show that compared with the traditional single nMOS structure, both DSOI MOS-DIO and MOS-SCR exhibit superior current discharge capability with an increase in failure current of up to 39% under the same footprint. The leakage of the proposed structures is also reduced to below 0.2 pA/mu m thanks to the double buried oxide isolation. In addition, both triggering and holding voltages can be flexibly tuned via the positioning of the two shunt devices. Technology computer-aided design (TCAD) simulations were carried out for MOS-SCR to interpret the physical mechanism and predict the performance under different device parameters, including gate length, stacked modes, and ambient temperature.
Characterization and Analysis of Diode-String ESD Protection in 28nm CMOS by VFTLP

Cheng Li,Chenkun Wang,Qi Chen,Feilong Zhang,Fei Lu,Xuejie Shi,Yongsheng Yang,Hongwei Li,Guang Chen,Tony Li,Danniel Feng,Tianshen Tang,Yuhua Cheng,Albert Wang

DOI: https://doi.org/10.1109/ipfa.2017.8060172

2017-01-01

Abstract:This paper reports characterization and analysis of diode string electrostatic discharging (ESD) protection structures fabricated in a foundry 28nm CMOS technology. Comprehensive measurements were conducted using very-fast transmission line pulse (VFTLP) tester for Charged Device Model (CDM) ESD protection. The analysis results reveal the I-V insights critical to practical ESD protection designs.
An Overview of ESD Protection in Nanometer IC

李明亮,董树荣,韩雁,杜晓阳,霍明旭,郭维,郭清,黄大海,宋波

2010-01-01

Abstract:On-chip ESD protection design for nanometer IC was reviewed,including characteristics of nanometer IC,failure mechanism and cases analyses of nanometer device,basic ESD protection elements based on advanced CMOS bulk and SOI technology.Heat generation and dissipation,and boundary thermal resistance were investigated,as well as their effects on ESD protection for nanometer IC.Two novel concepts of vertical thermal diffusion and process integration were proposed to enhance the robustness of ESD protection in nanometer IC.
Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Ming X. Huo,Koubao Ding,Yan Han,Shurong Dong,Xiaoyang Du,Dahai Huang,Bo Song

DOI: https://doi.org/10.1109/IPFA.2009.5232711

2009-01-01

Abstract:The popular electrostatic discharge (ESD) protection device, multi-finger NMOS with gate-coupling technique for better uniform turning-on, can be affected by process variation. The transmission line pulsing (TLP) test results reveal this phenomenon. The trigger voltage of the same pin on some products shifts from 9.5 V to 15.5 V. No such significant difference was ever reported in the literature. In this study, the circuit simulations at various process corners are applied to study the snapback device under this situation. With only the NMOS gate-drain overlap as coupling capacitance, the gate-to-ground resistor plays a vital role in counteracting the variation. When increased from 3 Kohm to 12 Kohm, the turn-on voltage is reduced and the target ESD performance is achieved. The protection structure is processed on an EEPROM process, which is used as both I/O protection circuit and power-clamp. It is able to pass 4 kV HBM ESD level.
Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Weihuai Wang,Hao Jin,Shurong Dong,Lei Zhong,Yan Han

DOI: https://doi.org/10.1016/j.sse.2015.11.033

IF: 1.916

2016-01-01

Solid-State Electronics

Abstract:Researches on the electrostatic discharge (ESD) performance of drain-extended NMOS (DeNMOS) under the state-of-the-art 28 nm and 40 nm bulk CMOS process are performed in this paper. Three distinguishing phases of avalanche breakdown stage, depletion region push-out stage and parasitic NPN turn on stage of the gate-grounded DeNMOS (GG-DeNMOS) fabricated under 28 nm CMOS process measured with transmission line pulsing (TLP) test are analyzed through TCAD simulations and tape-out silicon verification detailedly. Damage mechanisms and failure spots of GG-DeNMOS under both CMOS processes are thermal breakdown of drain junction. Improvements based on the basic structure adjustments can increase the GG-DeNMOS robustness from original 2.87 mA/mu m to the highest 5.41 mA/mu m. Under 40 nm process, parameter adjustments based on the basic structure have no significant benefits on the robustness improvements. By inserting P+ segments in the N+ implantation of drain or an entire P+ strip between the N+ implantation of drain and polysilicon gate to form the typical DeMOS-SCR (silicon-controlled rectifier) structure, the ESD robustness can be enhanced from 1.83 mA/mu m to 8.79 mA/mu m and 29.78 mA/mu m, respectively. (C) 2015 Elsevier Ltd. All rights reserved.
ESD Diode Devices Simulation and Analysis in a FinFET Technology

Yunhao Li,Yize Wang,Yuan Wang

DOI: https://doi.org/10.23919/ieds48938.2021.9468834

2021-01-01

Abstract:As CMOS scales down to FinFET technology, the performance of ESD devices degenerates seriously. In this work, two types of ESD protection diodes, Gated Diode and STI Diode, are investigatedin 14nm FinFET technology. The corresponding 3D TCAD simulation helps to understand the working mechanism for the above two diodes.
Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Cheng Zhang,Fanyu Liu,Xiaojing Li,Siyuan Chen,Lei Shu,Lili Ding,Qiwen Zheng,Yong Xu,Xiao Yu,Jing Wan,Zhengsheng Han,Bo Li,Tianchun Ye

DOI: https://doi.org/10.1109/ted.2024.3449249

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:The impact of the total ionizing dose (TID) on low leakage electrostatic discharge (ESD) protection devices fabricated on the 180-nm double silicon on insulator (DSOI) technology is investigated through experiments and numerical simulations. The devices under tests (DUTs) are MOS-DIO, MOS-SCR, and gate-grounded NMOSFET (GGNMOS). The transmission line pulse (TLP) measurements were carried out before and right after 60Co gamma ray irradiation. The results show that the radiation-induced charges and traps mainly located in the top buried oxide (BOX1) can lead to deterioration of ESD characteristics, such as leakage and triggering voltage. After being irradiated to a dose of 300 krad(Si), the leakage of GGNMOS increases by about three orders of magnitude, and in addition, its snapback characteristic vanishes. Radiation hardness on DSOI-based ESD devices is analyzed based on experiment and simulation results, which implies that the negative voltage on back-gate electrode can mitigate the deterioration of ESD characteristics caused due to irradiation.

engineering, electrical & electronic,physics, applied
Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

yuan wang,guangyi lu,lizhong zhang,jian cao,song jia,xing zhang

DOI: https://doi.org/10.1109/IPFA.2014.6898177

2014-01-01

Abstract:Four-terminal and three-terminal asymmetrical n-type LDMOS (asym-nLDMOS) devices are investigated in 0.18μm 40V SOI BCD technology. To improve normal asym-nLDMOS devices ESD robustness, an additional p-sink implant is added beneath their source/drain diffusion regions. Transmission line pulse measured results show that the novel asym-nLDMOS devices have a suitable triggering voltage and 30-48% improvement of second breakdown current.

Experimental Investigation of ESD Protection for a 22-Nm FD-SOI Process

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Electrothermal characterization of SOI FinFETs

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

A Novel Gate-Coupled NMOS (gcnmos) for FD-SOI ESD Protection

Z2-FET: A Promising FDSOI Device for ESD Protection

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Robustness-Improved ESD Protection Devices with Low Leakage Using Middle Silicon Layer in Double SOI Technology

Characterization and Analysis of Diode-String ESD Protection in 28nm CMOS by VFTLP

An Overview of ESD Protection in Nanometer IC

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

ESD Diode Devices Simulation and Analysis in a FinFET Technology

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices