Abstract:A coupled electrical-thermal cosimulation with consideration of the temperature dependence of the metal-oxide-semiconductor (MOS) effect is performed for coaxial through silicon vias (C-TSVs) by using equivalent electrical and thermal circuit models. In the equivalent electrical circuit (EEC) model, the dependence of the MOS capacitance on bias voltage, operation frequency, oxide charge density, and temperature is studied, and further verified by measurement results from a previous publication. A 3-D equivalent thermal circuit (ETC) model with lump components, including thermal resistance and thermal capacitance analytically calculated from the geometry and material parameters of C-TSVs, is proposed for transient thermal simulation. The accuracy of the EEC and ETC models is verified by comparisons with full-wave simulations. Transient electrical-thermal co-simulation is performed for the C-TSVs with the EEC and ETC models. Results reveal that the temperature dependence of depletion width and corresponding MOS capacitance leads to considerable variations in the S-parameters of C-TSVs.

Modeling and Characterization of Coaxial Through-Silicon Via with Electrically Floating Inner Silicon

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electrical Characterization of Coaxial Silicon–Insulator–Silicon Through-Silicon Vias: Theoretical Analysis and Experiments

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Wideband impedance model for coaxial through-silicon vias in 3-D integration

Multiphysics Characterization of Large-Scale Through-Silicon-via Structures

An Analytical Model for Capacitance of Silicon-Insulator-Silicon Through- Silicon- Vias