Abstract:In this study, the reliability of several potential interconnect methods for high temperature applications are evaluated by using accelerated thermal cyclic tests on typical LED test carriers. The applied interconnect materials are SAC (Sn-Ag-Cu), SAC+(SAC with doping elements), and an eutectic AuSn solder alloy. The degradation behavior and typical failure modes in the different interconnect materials are analyzed at different test intervals. SAC+ shows better fatigue resistance than SAC based solder interconnects at the early phase of tests. However, the leading position decreases at relatively long test cycles and high stress situations. This could be explained by the different behavior of crack propagation in SAC and SAC+ interconnects caused by the changing microstructures under cyclic temperature loads. Although well processed AuSn shows relatively higher fatigue resistance to cyclic thermal loads than SAC/SAC+ based interconnects, some issues like cracks in the component or substrate, or the crack in the plating layers could be an attention point. In addition, the process need be taken carefully to avoid some quality issues like (micro-) cracks in the component. Three dimensional numerical models of typical LED modules are developed. The time and temperature dependent creep behavior of the interconnect material is considered. The developed models enable the analysis of the thermal — mechanical performance of solder interconnects under cyclic temperature loads. Furthermore, the sensitivity of fatigue resistance with respect to reliability parameters is predicted for several designs. It is concluded that the fatigue resistance is most sensitive for changes in thickness and meniscus of solder interconnects. Also it is shown that AuSn is less sensitive to meniscus changes than SAC/SAC+.

Reliability Study of Au-In Solid-Liquid Interdiffusion Bonding for Gan-Based Vertical Led Packaging

Study On Solder Bonding Technology And Its Failure Mechanism

Low Temperature Au-In-Au Metallic Bonding and Its Application in the Fabrication of Vcsels

Effects of Bonding Materials on Optical–Thermal Performances and High-Temperature Reliability of High-Power LED

Investigating the Performance and Reliability of Au-Sn Bonded Flip-Chip Micro-LEDs

Low-Temperature Bonding Technique for Fabrication of High-Power Gan-Based Blue Vertical Light-Emitting Diodes

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging

Study on die-bonding key technology of UV LED packaging

Phase Reaction of Au/Sn Solder Bonding for GaN-based Vertical Structure Light Emitting Diodes

High-stability Reflective Bonding Pads for GaN-based Flip-Chip Light-Emitting Diodes Packaged by Reflow Soldering

Comparative Study of Die-Attach Materials for LED Die Bonding

A New Method for Low-Temperature Direct Wafer Bonding of InP/GaAs

Reliability of Au-Si Eutectic Bonding

Application of Nano Silver Sintering Technique on the Chip Bonding for Flip-Chip and Vertical Light Emitting Diodes

Phase Distribution in Eutectic AuSn Layer Changed by Temperature Ramping Rate and Its Effect on the Performance of GaN-based Vertical Structure LEDs

Fabrication and Mechanical Properties Improvement of Micro Bumps for High-Resolution Micro-LED Display Application

Potential interconnect technologies for high power LEDs assemblies

Application of metal interconnection process with micro-LED display by laser-assisted bonding technology

23‐3: Application of Laser‐Assisted Bonding in Micro‐LED display technology

Metallurgical Behavior of Au/Al Bond Interface during High Temperature Storage of Ultrasonic Wedge Bonding

Low Temperature and Short Time Au/Sn Solid-liquid Diffusion Bonding for 3D Integration