Abstract:Micro-light-emitting diode (Micro-LED) displays have attracted growing attention due to their unsurpassed properties that satisfy the requirements of reality/virtual reality (AR/VR) displays. A crucial procedure of monolithic integration technology in high-density microdisplays is the interconnection process, which is intimately associated with the quality of the display device. Microfluidic electroless interconnection (MELI), an innovative low-temperature and pressure-free chip-stacking approach that eliminates the warpage-induced issues and cracking damage of the chip caused by thermo-compression bonding (TCB), holds great promise as a technology for establishing interconnections between the CMOS driver and Micro-LED. However, the requirement for the consistency of the microbump arrays and the risk of creating bridges is significantly intensified with smaller gaps in stacked chips, which restricts the application range of MELI to high-density interconnects. This paper analyzes the feasibility of further lowering the stand-off height of stacked chips in ultrafine pitch interconnects by optimizing the bump preparation process. The plasma modification time and surfactant concentration during the bump preparation process have been investigated. The result indicated that microbump arrays with a uniformity of less than 3% could be successfully manufactured by employing a 7-min plasma treatment and incorporating optimal surfactants, which catalyzes the implementation of the subsequent vertical interconnection process and eventually enhances yields of Micro-LEDs.

Application of metal interconnection process with micro-LED display by laser-assisted bonding technology

23‐3: Application of Laser‐Assisted Bonding in Micro‐LED display technology

The improvement of bonding metal layers for high resolution micro-LED display application

Metallic Bonding Technique and Applications to Optoelectronic Devices

Development of Metal Bonding for Passive Matrix Micro-LED Display Applications

Investigating the Performance and Reliability of Au-Sn Bonded Flip-Chip Micro-LEDs

Mass transfer for Micro-LED display: Transfer printing techniques

Low Temperature Au-In-Au Metallic Bonding and Its Application in the Fabrication of Vcsels

Mechanical and electrical cold bonding based on metallic nanowire surface fasteners.

High-yield Micro-LED laser transfer accomplished using an ablation-type release material

Electroless deposition of high-uniformity nickel microbumps with ultrahigh resolution of 8 μm pitch for monolithic Micro-LED display

Super retina TFT based full color microLED display via laser mass transfer

Polymer Reinforced Solder Paste for Improving Impact Energy Absorption Capability in Micro LED Laser-Assisted Mass Transfer

Construction of Microstructures on the Cu Substrate Using Ultrafast Laser Processing to Enhance the Bonding Strength of Sintered Ag Nanoparticles

Effects of Bonding Materials on Optical–Thermal Performances and High-Temperature Reliability of High-Power LED

Au80Sn20-based Targeted Noncontact Nanosoldering with Low Power Consumption.

Mass transfer, detection and repair technologies in micro-LED displays

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Process optimization of preparing CMOS backplane for ultrahigh pixel density red Micro-LED display

Low-temperature attaching of LED chips using SnBiIn solder nanoparticles

Low Temperature and Short Time Au/Sn Solid-liquid Diffusion Bonding for 3D Integration