Abstract:Recently, many significant strides have been made for the integration of micro-light-emitting diodes (Micro-LEDs) in display. However, the reflow process is usually accomplished under formic acid or hydrogen ambient, which is irritating, flammable, explosive, and very expensive. For reliable micro bumps in the flip-chip package, it is essential that the correlations among mechanical properties, fracture mechanisms, and interfacial reactions of micro bumps formed on a silicon substrate be understood. In this article, a novel under bump metallurgy (UBM) structure based on SiO 2 openings was described, as a result of which the indium micro bump arrays with a pitch of 40 and a diameter of 15 were successfully fabricated by the reflow process via glycerol. The effect of reflow time and reflow temperature on the reliability of indium micro bumps was also investigated. Experimental results showed that the average shear strength of indium micro bumps peaked at the reflow conditions of 200 °C for 180 s and decreased with further increasing reflow time and temperature. It was considered that the stable AuIn 2 intermetallic compounds (IMCs) formed toward the solder joint improved the shear strength after reflowed at 200 °C for 180 s. As the reflow time and temperature increased, the grain size of IMCs increased, which weakened the interfacial connection. In addition, the transfer and bonding reliability of Micro-LED chips through the flip-chip bonding process have also been discussed.

Investigating the Performance and Reliability of Au-Sn Bonded Flip-Chip Micro-LEDs

The improvement of bonding metal layers for high resolution micro-LED display application

23‐3: Application of Laser‐Assisted Bonding in Micro‐LED display technology

Efficient Mini/Micro-Perovskite Light-Emitting Diodes

Application of metal interconnection process with micro-LED display by laser-assisted bonding technology

Effects of Bonding Materials on Optical–Thermal Performances and High-Temperature Reliability of High-Power LED

Fabrication and Mechanical Properties Improvement of Micro Bumps for High-Resolution Micro-LED Display Application

Performance comparison of flip-chip blue-light microLEDs with various passivation

Research on Characteristics Matching of Micro-LED Devices

Effect of Different Bonding Materials on Flip-Chip LED Filament Properties

Near-Infrared Nanophosphors Based on CuInSe2 Quantum Dots with Near-Unity Photoluminescence Quantum Yield for Micro-LEDs Applications

Development of Metal Bonding for Passive Matrix Micro-LED Display Applications

Process optimization of preparing CMOS backplane for ultrahigh pixel density red Micro-LED display

Enhanced contact performance of high-brightness micro-LEDs via ITO/Al anode stack and annealing process

The Implementation of Sapphire Microreflector for Monolithic Micro-LED Array

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

High Efficiency of 5 Μm-Diameter Blue Micro-Light-Emitting Diodes

Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

Phase Reaction of Au/Sn Solder Bonding for GaN-based Vertical Structure Light Emitting Diodes

Fabrication, Characterization and Applications of Flexible Vertical InGaN Micro-Light Emitting Diode Arrays

Monolithic High-Performance Micro-Leds Using Planar-Geometry Pixelation Process for High-Resolution Micro-Display Applications