Abstract:The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage, significantly deteriorating device performance. In this study, we demonstrated a novel selective thermal oxidation (STO) method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation. Thermal annealing in ambient air oxidized and reshaped the LED structure, such as p-layers and InGaN/GaN multiple quantum wells. Simultaneously, the pixel areas beneath the pre-deposited SiO2 layer were selectively and effectively protected. It was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide, significantly reducing LED leakage current. Furthermore, applying a thicker SiO2 protective layer minimized device resistance and boosted device efficiency effectively. Utilizing the STO method, InGaN green micro-LED arrays with 50-, 30-, and 10-µm pixel sizes were manufactured and characterized. The results indicated that after 4 h of air annealing and with a 3.5-μm SiO2 protective layer, the 10-µm pixel array exhibited leakage currents density 1.2 × 10-6 A/cm2 at -10 V voltage and a peak on-wafer external quantum efficiency of ~6.48%. This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device efficiency. Micro-LEDs fabricated through the STO method can be applied to micro-displays, visible light communication, and optical interconnect-based memories. Almost planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with micro-LEDs. Moreover, the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices, such as photodetectors, laser diodes, high-electron-mobility transistors, and Schottky barrier diodes.

Monolithic High-Performance Micro-Leds Using Planar-Geometry Pixelation Process for High-Resolution Micro-Display Applications

Efficient Mini/Micro-Perovskite Light-Emitting Diodes

Implantation Energy- and Size-Dependent Light Output of Enhanced-Efficiency Micro-Led Arrays Fabricated by Ion Implantation.

Monolithically Integrated μ LEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach

Enhanced Performance of Vertical-Structured InGaN Micro-Pixelated Light-Emitting-diode Array Fabricated Using an Ion Implantation Process.

Heterogeneous Integration of Complementary Field‐Effect Transistors for High‐Performance Micro LED Displays

Etching-free pixel definition in InGaN green micro-LEDs

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 μm Quantum‐Dot Pixels

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Electrically driven mid-submicron pixelation of InGaN micro-LED displays for AR glasses

Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays

Ion implantation isolation based micro-light-emitting diode device array properties

Ultra-small Size Micro-LEDs with Enhanced Efficiency for Near-Eye Display

Process optimization of preparing CMOS backplane for ultrahigh pixel density red Micro-LED display

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

The scaling of the microLED and the advantage of 2D materials

Fully Enclosed Composite Micro/Nano‐Package for High‐Quality Micro‐LED Display Pixels and In Situ Nanoimprint Technology

Light-Emitting MOS Junction for Ultrahigh-Resolution Quantum Dot Displays

Plasma‐Damage Free Efficiency Scaling of Micro‐LEDs by Metal‐Assisted Chemical Etching

Nanomolecular OLED Pixelization Enabling Electroluminescent Metasurfaces

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer