Monolithically Integrated μ LEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach

Yuefei Cai,Chenqi Zhu,Wei Zhong,Peng Feng,Sheng Jiang,Tao Wang
DOI: https://doi.org/10.1002/admt.202100214
IF: 6.8
2021-05-04
Advanced Materials Technologies
Abstract:<p>There is a significantly increasing demand on developing a microLED (<b>μ</b>LED) based microdisplay which may be the only display system that can meet the requirements for augmented reality/virtual reality systems, helmet mounted displays, and head‐up displays. However, a number of fundamental challenges which cannot be met by any existing technologies need to be overcome before such a microdisplay with satisfied performance becomes possible. In this paper, a different type of integration concept using an epitaxial approach is proposed, aiming to monolithically integrate <b>μ</b>LEDs and high electron mobility transistors (HEMTs) on a single chip. This concept can be potentially realized by using a selective epitaxial overgrowth method on a predefined HEMT template featuring microhole masks. Finally, the proposed epitaxial integration concept is translated into a prototype, demonstrating an 8 <b>×</b> 8 microLED microdisplay, where each <b>μ</b>LED is electrically driven by an individual HEMT which surrounds its respective <b>μ</b>LED via the gate bias of the HEMT.</p>
materials science, multidisciplinary
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