Abstract:The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage, significantly deteriorating device performance. In this study, we demonstrated a novel selective thermal oxidation (STO) method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation. Thermal annealing in ambient air oxidized and reshaped the LED structure, such as p-layers and InGaN/GaN multiple quantum wells. Simultaneously, the pixel areas beneath the pre-deposited SiO2 layer were selectively and effectively protected. It was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide, significantly reducing LED leakage current. Furthermore, applying a thicker SiO2 protective layer minimized device resistance and boosted device efficiency effectively. Utilizing the STO method, InGaN green micro-LED arrays with 50-, 30-, and 10-µm pixel sizes were manufactured and characterized. The results indicated that after 4 h of air annealing and with a 3.5-μm SiO2 protective layer, the 10-µm pixel array exhibited leakage currents density 1.2 × 10-6 A/cm2 at -10 V voltage and a peak on-wafer external quantum efficiency of ~6.48%. This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device efficiency. Micro-LEDs fabricated through the STO method can be applied to micro-displays, visible light communication, and optical interconnect-based memories. Almost planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with micro-LEDs. Moreover, the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices, such as photodetectors, laser diodes, high-electron-mobility transistors, and Schottky barrier diodes.

Enhanced Performance of Vertical-Structured InGaN Micro-Pixelated Light-Emitting-diode Array Fabricated Using an Ion Implantation Process.

Implantation Energy- and Size-Dependent Light Output of Enhanced-Efficiency Micro-Led Arrays Fabricated by Ion Implantation.

Enhancing optical output power efficiency in nitride‐based green micro light‐emitting diodes by sidewall ion implantation

Ion implantation isolation based micro-light-emitting diode device array properties

Monolithic High-Performance Micro-Leds Using Planar-Geometry Pixelation Process for High-Resolution Micro-Display Applications

Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip

Etching-free pixel definition in InGaN green micro-LEDs

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Performance-enhanced vertical LED using laser irradiation treatment to control wafer-level n-GaN protrusion arrays

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

P‐10.11: Pixelation of Nano‐LED arrays with high effective light‐emitting area ratio by ion injection: A Simulation study

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate with Self-Assembled Conical Arrays

Monolithic integration of GaN-based green micro-LED and quasi-vertical MOSFET utilizing a hybrid tunnel junction

Wafer-scale Vertical Injection III-nitride Deep-Ultraviolet Light Emitters

GaN micro-LED/GFET monolithic integrated display pixels fabricated with new processing technology

Ultra-small InGaN Green Micro-Light-emitting Diodes Fabricated by Selective Passivation of P-Gan

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN

Electrically driven mid-submicron pixelation of InGaN micro-LED displays for AR glasses