Abstract:The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage, significantly deteriorating device performance. In this study, we demonstrated a novel selective thermal oxidation (STO) method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation. Thermal annealing in ambient air oxidized and reshaped the LED structure, such as p-layers and InGaN/GaN multiple quantum wells. Simultaneously, the pixel areas beneath the pre-deposited SiO2 layer were selectively and effectively protected. It was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide, significantly reducing LED leakage current. Furthermore, applying a thicker SiO2 protective layer minimized device resistance and boosted device efficiency effectively. Utilizing the STO method, InGaN green micro-LED arrays with 50-, 30-, and 10-µm pixel sizes were manufactured and characterized. The results indicated that after 4 h of air annealing and with a 3.5-μm SiO2 protective layer, the 10-µm pixel array exhibited leakage currents density 1.2 × 10-6 A/cm2 at -10 V voltage and a peak on-wafer external quantum efficiency of ~6.48%. This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device efficiency. Micro-LEDs fabricated through the STO method can be applied to micro-displays, visible light communication, and optical interconnect-based memories. Almost planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with micro-LEDs. Moreover, the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices, such as photodetectors, laser diodes, high-electron-mobility transistors, and Schottky barrier diodes.

P‐10.11: Pixelation of Nano‐LED arrays with high effective light‐emitting area ratio by ion injection: A Simulation study

Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

Enhancing optical output power efficiency in nitride‐based green micro light‐emitting diodes by sidewall ion implantation

Implantation Energy- and Size-Dependent Light Output of Enhanced-Efficiency Micro-Led Arrays Fabricated by Ion Implantation.

Etching-free pixel definition in InGaN green micro-LEDs

High-output power GaN-LED based on surface plasmon enhancement

Device Simulation on GaN‐LED Operating in Noncarrier Injection Mode for Performance Improvement by Enhancing the Tunneling Effect in Multiquantum Wells

Enhanced Performance of Vertical-Structured InGaN Micro-Pixelated Light-Emitting-diode Array Fabricated Using an Ion Implantation Process.

Monolithic High-Performance Micro-Leds Using Planar-Geometry Pixelation Process for High-Resolution Micro-Display Applications

Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

Operation Behavior Under Extremely High Injection Level for GaN-Based Micron LED

Ion implantation isolation based micro-light-emitting diode device array properties

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Electrically driven mid-submicron pixelation of InGaN micro-LED displays for AR glasses

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN

Study on Luminescence Performance of GaN-based μLEDs under High Injection Level

Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer