Abstract:We report a new nBn photodetector (nBn-PD) design based on the InAlSb/AlSb/InAlSb/InAsSb material systems for mid-wavelength infrared (MWIR) applications. In this structure, delta-doped compositionally graded barrier (δ-DCGB) layers are suggested, the advantage of which is creation of a near zero valence band offset in nBn photodetectors. The design of the δ-DCGB nBn-PD device includes a 3 μm absorber layer (n-InAs 0.81 Sb 0.19 ), a unipolar barrier layer (AlSb), and 0.2 μm contact layer (n-InAs 0.81 Sb 0.19 ) as well as a 0.116 μm linear grading region (InAlSb) from the contact to the barrier layer and also from the barrier to the absorber layer. The analysis includes various dark current contributions, such as the Shockley–Read–Hall (SRH), trap-assisted tunneling (TAT), Auger, and Radiative recombination mechanisms, to acquire more precise results. Consequently, we show that the method used in the nBn device design leads to diffusion-limited dark current so that the dark current density is 2.596 × 10 −8 A/cm 2 at 150 K and a bias voltage of − 0.2 V. The proposed nBn detector exhibits a 50% cutoff wavelength of more than 5 μm, the peak current responsivity is 1.6 A/W at a wavelength of 4.5 μm and a − 0.2 V bias with 0.05 W/cm 2 backside illumination without anti-reflective coating. The maximum quantum efficiency at 4.5 μm is about 48.6%, and peak specific detectivity ( D *) is of 3.37 × 10 10 cm⋅Hz 1/2 /W. Next, to solve the reflection concern in this nBn devices, we use a BaF 2 anti-reflection coating layer due to its high transmittance in the MWIR window. It leads to an increase of almost 100% in the optical response metrics, such as the current responsivity, quantum efficiency, and detectivity, compared to the optical response without an anti-reflection coating layer.

Magnesium-doped InSbN P-N Junctions for Infrared Photodetection

Electrical & optical properties of Mg-doped narrow band-gap InSbN p-n junction

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

P-Type Zno By Sb Doping For Pn-Junction Photodetectors

Terahertz Emission From Silicon And Magnesium Doped Indium Nitride

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

InGaN/GaN P-I-n Photodiodes Fabricated with Mg-Doped P-Ingan Layer

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Mid-infrared Photodetectors Based on InSb Micro/nanostructures Grown on Low-Cost Mica Substrates

Dilute antimonide nitride for long wavelength infrared photodetection

Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

Anomalous Hall Mobility Kink Observed in Mg-doped InN: Demonstration of P-Type Conduction

Bandgap Engineering of InSb by N Incorporation by Metal-Organic Chemical Vapor Deposition

Room-temperature InAsSb pBin detectors for mid-infrared application

P-Type Behavior from Sb-Doped Zno Heterojunction Photodiodes

Direct Injection Tunnel Spectroscopy of a P-N Junction

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.

Colloidal InSb Quantum Dots/Organic Integrated Bulk Heterojunction for Fast and Sensitive Near‐Infrared Photodetectors

InSb/Ti2O3 pn heterojunctions: optoelectronic properties and NIR photovoltaic response

Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches