Abstract:This research introduces a hydrogen sensor made from a thin film of magnesium zinc oxide (MgZnO) deposited using a technique called radiofrequency co-sputtering (RF co-sputtering). Separate magnesium oxide (MgO) and zinc oxide (ZnO) targets were used to deposit the MgZnO film, experimenting with different deposition times and power levels. The sensor performed best (reaching a sensing response of 2.46) when exposed to hydrogen at a concentration of 1000 parts per million (ppm). This peak performance occurred with a MgZnO film thickness of 432 nanometers (nm) at a temperature of 300 °C. Initially, the sensor's responsiveness increased as the film thickness grew. This is because thicker films tend to have more oxygen vacancies, which are imperfections that play a role in the sensor's function. However, further increases in film thickness beyond the optimal point harmed performance. This is attributed to the growth of grains within the film, which hindered its effectiveness. X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM) were employed to thoroughly characterize the quality of the MgZnO thin film. These techniques provided valuable insights into the film's crystal structure and morphology, crucial factors influencing its performance as a hydrogen sensor.

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.

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Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Magnesium-doped InSbN P-N Junctions for Infrared Photodetection

A Study of MgZnO Thin Film for Hydrogen Sensing Application

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

Hydrogen Sensors Based On Pt-Algn/Ain/Gan Schottky Diode

Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure

Development of hydrogen sensor based on AlGaN/GaN high electron mobility transistor structure

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

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Growth and Properties of Mg-doped In-polar InN Films

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Improved detection performance of self-driven InZnO / p-GaN heterojunction UV photodetector by lanthanum doping

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Enzymatic Lactic Acid Sensing by In-doped ZnO Nanowires Functionalized AlGaAs/GaAs High Electron Mobility Transistor

Hydrogen detecting characteristics of a palladium nanoparticle/indium gallium oxide based sensor