Abstract:In this paper, high-frequency electrothermal characteristics of the power delivery network (PDN) are investigated for through-silicon-via (TSV)-based 3-D ICs by utilizing a self-developed electrothermal co-simulation solver. The solver circularly solves the full-wave electromagnetic equation and the steady heat conduction equation using the finite-element method. The preconditioned biconjugate gradient method combined with the element-by-element approximate factorization method is employed to speed up the simulation and save memory cost. Based on the solver, the impacts of the excitation condition and dielectric loss tangent are analyzed for a one-chip power grid, while the influence of TSV location is studied for a two-chip PDN structure. In the modeling, both the conductor and dielectric losses are taken into account, and the temperature dependence of material parameters is treated appropriately. As results, PDN impedance and self-heating-induced temperature rise are emphatically analyzed in a wide frequency range, and the electric field and temperature distributions of several resonance modes are presented. The results would be beneficial for the design and thermal management of 3-D PDNs.

Research on Crosstalk Issue of Through Silicon Via for 3d Integration

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Fast time domain crosstalk analysis of through silicon vias based on equivalent circuit model

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Electrothermal modelling of through silicon via (TSV) interconnects

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Capacitive coupling analysis of TSV array in 3D packaging

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method