Diffusion Barrier Performances of V,V-N and V/V-N Films in Cu Interconnection
Cuiping WANG,Tuo DAI,Yong LU,Zhan SHI,Jinbin ZHANG,Xingjun LIU
DOI: https://doi.org/10.6043/j.issn.0438-0479.201604011
2016-01-01
Abstract:The V,V-N and V/V-N diffusion barrier layers with 50 nm thickness were deposited on Si(100)substrates by magnetron sputtering,and then the 300 nm thickness of the Cu films were prepared on diffusion barrier layers to obtain Cu/V/Si,Cu/V-N/Si and Cu/V/V-N/Si multilayer films.The multilayer film samples were subsequently annealed at 300-750 ℃ for 1 h in vacuum atmos-phere.The crystal structures,microstructure morphologies and square resistances were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM)and the four-point probe (FPP)methods to investigate the diffusion barrier performances of the V,V-N and V/V-N films.The results show as follows:diffusion barrier layers of V,V-N and V/V-N effectively blocked the dif-fusion of Cu into the Si substrate.The Cu/V/Si and Cu/V-N/Si multilayer films still kept good thermal stability at the annealing temperature of 600 ℃ and 650 ℃,respectively.However,for the Cu/V/V-N/Si multilayer film,due to the existence of stacking structure,the samples maintained favorable thermal stability when being annealed at 700 ℃.Therefore,the stacking structure of the V/V-N film was an ideal diffusion barrier layer.