Abstract:Covalent grafting of dielectric films containing polyhedral oligomeric silsesquioxane (POSS) on the surface of Cu(111) is performed by a one-step electrochemical reduction of diazonium salts. This method is efficient and economic and performs in a proton-polar solvent of deionized water and tetrahydrofuran (THF), where the monomer employs an octavinylsilsesquioxane (OVS) containing a POSS core. The eight vinyl bonds contained in OVS are used to participate in aryl radical-initiated polymerization reactions to form films. The formed film is dense and covers the copper surface completely and uniformly. The thickness of the film can be controlled by adjusting the reaction time. The components of the films are mainly polynitrophenyl (PNP) or polyaminophenyl (PAP) as well as poly(octavinylsilsesquioxane) (POVS), and the POVS content could be adjusted by the applied voltage. The introduction of POSS prevents the copper surface from being oxidized and often gives the film good properties such as good dielectric properties, mechanical properties, and thermal properties. In addition, the presence of Cu-O-C and Cu-C bonds between the film and copper interface is confirmed at different film thicknesses by X-ray photoelectron spectroscopy (XPS), which allowed the construction of covalent bonds between metal and nonmetal, further enhancing the bonding between the film and copper. Organic films prepared by electrochemical reduction of diazonium salts using OVS as a monomer will have potential significance for the future development of the electronics industry.

Cu and Cu(Mn) Films Deposited Layer-by-layer Via Surface-Limited Redox Replacement and Underpotential Deposition

Atomic layer deposition of copper and copper silver films using an electrochemical process

Direct copper plating on ultra-thin sputtered cobalt film in an alkaline bath

Direct, Sequential Growth of Copper Film on TaN/Ta Barrier Substrates by Alternation of Pb-UPD and Cu-SLRR

Thermal ALD of Cu via reduction of Cu xO films for the advanced metallization in spintronic and ULSI interconnect systems

XRD Study on Cu Layer in IC Interconnect

Structure and Properties of Electrocodeposited Cu-Al2o3 Nanocomposite Thin Films

Study on Electroless Deposition Using Glyoxylic Acid As Reducing Agent for Copper Interconnection

A New Method to Obtain Cu Films with Lower Resistivity and Higher Interface Adhesion on Different Substrates

On the Mechanism of the Atomic Layer Deposition of Cu Films on Silicon Oxide Surfaces: Activation Using Atomic Hydrogen and Three-Dimensional Growth

Emerging Non-Noble-Metal Atomic Layer Deposited Copper as Seeds for Electroless Copper Deposition

Cu$_x$Al$_{1-x}$ films as Alternatives to Copper for Advanced Interconnect Metallization

Electroless Copper Deposition for Ultralarge-Scale Integration

Covalent Grafting of Dielectric Films on Cu(111) Surface Via Electrochemical Reduction of Aryl Diazonium Salts.

ALD-grown Seed Layers for Electrochemical Copper Deposition Integrated with Different Diffusion Barrier Systems

(Digital Presentation) On Epitaxial Electrodeposition of Co, Ru and Cu for Interconnect Applications

Electroless Cu Deposition Process on TiN for ULSI Interconnect Fabrication Via Pd/Sn Colloid Activation

Electrodeposition, Structural, and Corrosion Properties of Cu Films from A Stable Deep Eutectics System with Additive of Ethylene Diamine

Study of A Single Layer Ultrathin Como Film As A Direct Plateable Adhesion/Barrier Layer for Next Generation Interconnect

Nucleation and growth of low resistivity copper thin films on polyimide substrates by low-temperature atomic layer deposition

Nanoscale Metal/Metal Multilayers Electrodeposited from Ethaline