Emerging Non-Noble-Metal Atomic Layer Deposited Copper as Seeds for Electroless Copper Deposition

Zihong Gao,Chengli Zhang,Qiang Wang,Guanglong Xu,Guoyou Gan,Hongliang Zhang

DOI: https://doi.org/10.3390/ma17071620

IF: 3.4

2024-04-03

Materials

Abstract:Copper metal catalyst seeds have recently triggered much research interest for the development of low-cost and high-performance metallic catalysts with industrial applications. Herein, we present metallic Cu catalyst seeds deposited by an atomic layer deposition method on polymer substrates. The atomic layer deposited Cu (ALD-Cu) can ideally substitute noble metals Ag, Au, and Pd to catalyze Cu electroless deposition. The optimized deposition temperature and growth cycles of an ALD-Cu catalyzed seed layer have been obtained to achieve a flexible printed circuit (FPC) with a high performance electroless plating deposited Cu (ELD-Cu) film. The ELD-Cu films on the ALD-Cu catalyst seeds grown display a uniform and dense deposition with a low resistivity of 1.74 μΩ·cm, even in the through via and trench of substates. Furthermore, the ALD-Cu-catalyzed ELD-Cu circuits and LED devices fabricated on treated PI also demonstrate excellent conductive and mechanical features. The remarkable conductive and mechanical characteristics of the ALD-Cu seed catalyzed ELD-Cu process demonstrate its tremendous potential in high-density integrated FPC applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering

What problem does this paper attempt to address?

The paper primarily discusses the use of non-precious metal atomic layer deposition copper (ALD-Cu) as a catalyst seed for electroless copper deposition (ELD-Cu). The study indicates that the copper catalyst seed is of significant importance for the development of low-cost and high-performance industrial catalysts. The authors successfully replaced traditional precious metals such as silver, gold, and palladium as catalyst seeds for copper deposition by depositing Cu on polymer substrates using the ALD method.

In the experiment, they optimized the deposition temperature and growth cycle of ALD-Cu to achieve high-performance electroless copper films on flexible printed circuits (FPCs). These films exhibited uniform and dense deposition, with a low resistivity of 1.74 µΩ·cm, even in microstructured vias and trenches. In addition, FPCs and LED devices based on ALD-Cu-catalyzed ELD-Cu demonstrated good conductivity and mechanical properties on treated PI substrates.

The paper also discusses the enormous potential of ALD-Cu seed layers in high-density integrated FPC applications, as they can overcome limitations of traditional methods in the manufacturing process, especially for coverage of high aspect ratio structures. By adjusting the deposition temperature and growth cycle of ALD-Cu, particle size and loading can be controlled to achieve the desired catalytic activity, which is crucial for the efficiency of the electroplating process and the resistive characteristics of the films.

In conclusion, the paper aims to address how to utilize non-precious metal ALD-Cu seed to achieve cost-effective and high-performance electroless copper deposition technology, in order to promote the development of the electronics and printed circuit board industries.