Abstract:Surface modification of Ar plasma-pretreated SiLK film coating on a (100)-oriented silicon wafer (SiLK-Si substrate) via UV-induced graft copolymerization with 4-vinylpyridine (the 4VP-g-SiLK-Si surface) or 1-vinylimidazole (the VIDz-g-SiLK-Si surface! was carried out to promote the adhesion with the electrolessly deposited copper. The surface composition of the graft-copolymerized SiLK-Si substrates was characterized by X-ray photoelectron spectroscopy. The topography of the 4VP-g- SiLK-Si and VIDz-g-SiLK-Si surfaces was investigated by atomic force microscopy. The 4VP-g- SiLK-Si and VIDz-g-SiLK-Si surfaces could be activated by PdCl2 in the absence of prior sensitization by SnCl2 (the Sn-free activation process! for the subsequent electroless deposition of copper. The 180degrees-peel adhesion strength of the electrolessly deposited copper on the 4VP-g- SiLK-Si and VIDz-g-SiLK-Si surfaces reaches about 6 and 5 N/cm, respectively. These adhesion strength values were much higher than those of the electrolessly deposited copper on the pristine and Ar plasma-treated SiLK-Si surfaces. The strong adhesion of the electrolessly deposited copper to the VIDz-g-SiLK-Si and 4VP-g- SiLK-Si surfaces was attributed to the synergistic effect of the strong interaction between the pyridine or imidazole functional groups of the grafted polymers with copper atoms, the spatial distribution of the graft chains on the SiLK surface and into the metal matrix, and the fact that the graft chains were covalently tethered on the SiLK surface. (C) 2002 The Electrochemical Society.

Electroless Copper Deposition for Ultralarge-Scale Integration

Direct copper plating on ultra-thin sputtered cobalt film in an alkaline bath

Electroless Plating of Copper via a Sn-Free Process on Dielectric SiLK Surface Modified by UV-Induced Graft Copolymerization with 4-Vinylpyridine and 1-Vinylimidazole

Electroless Cu Deposition Process on TiN for ULSI Interconnect Fabrication Via Pd/Sn Colloid Activation

Electroless acid-based plating Cu on TiNi/Ti/SiO2/Si substrate

Superconformal Copper Electroplating on an Ultrathin Cobalt Seed in an Acidic Copper Sulfate Electrolyte

Ultra-high flatness and conductivity of copper electrodeposits obtained by nano-twinned/fine-grained double layer electrodeposition

Electrodeposition of Copper with Ultra-large Grains and Good Conductivity

Electroless nickel alloy deposition on SiO2 for application as a diffusion barrier and seed layer in 3D copper interconnect technology

Electroplating Cu on ALD $\text{tin}$ for Small Size TSV

Study on Electroless Deposition Using Glyoxylic Acid As Reducing Agent for Copper Interconnection

Plating Uniformity of Bottom-Up Copper Pillars and Patterns for Ic Substrates with Additive-Assisted Electrodeposition

Emerging Non-Noble-Metal Atomic Layer Deposited Copper as Seeds for Electroless Copper Deposition

Growth Behavior of Electroless Copper on Silicon Substrate

Acidic Electroless Cu Deposition in Cuso4-Nh4f Solution

3D Lithography and Deposition on Highly Structured Surfaces Using Plasma Surface Modification, SAM Coating, and Contact Displacement Electroless Plating

Electrochemical processes for the production of copper interconnects on non-metallic barrier layers

ALD-grown Seed Layers for Electrochemical Copper Deposition Integrated with Different Diffusion Barrier Systems

Focused electron beam induced deposition of copper with high resolution and purity from aqueous solutions

Possibility Of Direct Electrochemical Copper Deposition Without Seedlayer

Electroless Cu Deposition on a TiN Barrier in CuSO[sub 4]-HF Solution