Possibility Of Direct Electrochemical Copper Deposition Without Seedlayer

Hp Fung,Cc Wan
1999-01-01
Abstract:The possibility of applying copper deposition directly on top of TiN barrier via electrochemical method was studied. Previous report of using contact displacement to deposit copper was found chemically questionable. The copper deposition observed could be due to reaction between cupric ion and silicon underneath through cracks in thr intermediate TiN layer.
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