Abstract:It is demonstrated that cuprous oxide (Cu2O) can be electrodeposited epitaxially onto silicon (Si) and indium phosphide (InP) (001) single‐crystalline substrates from aqueous solution. Epitaxial electrodeposition under these conditions is remarkable considering the strong driving force for the formation of amorphous native oxide layers on Si and InP substrates. To elucidate the growth mechanisms, the microstructure of the interfaces between the Cu2O layer and the two different substrates was investigated by TEM (transmission electron microscopy) in conjunction with XEDS (X‐ray energy‐dispersive spectroscopy) and EELS (electron energy‐loss spectroscopy). In both heteroepitaxial systems, the Cu2O layers have a unique but non‐trivial crystallographic orientation relationship (OR) with the substrate, which can be described as a 45° rotation around the common [001] axis representing the substrate normal. We show that this relationship minimizes the overall misfit between corresponding interatomic spacings of the two adjacent crystals. In apparent contradiction to the unique OR, TEM revealed that in both hetero‐systems the Cu2O layer is separated from the substrate by an amorphous interlayer. The thickness of the interlayer typically is a few nanometers. The presence of an amorphous interlayer contrasts with our experimental results on electrodeposited Cu2O on Au (001) single‐crystal substrates, also included in this article, where TEM shows the Cu2O epilayer in direct contact with the substrate. XEDS and EELS analysis of the chemical composition and bonding at Cu2O/Si and Cu2O/InP interfaces in the as‐grown state as well as after tempering revealed that the interlayer is mainly composed of SiO2 and InPO4, respectively. Most likely, the observed epitaxial layers on top of an amorphous interlayer evolve by nucleation of epitaxial Cu2O directly on the substrate. While simultaneous oxidation of the substrate leads to the formation of an amorphous layer, the epitaxial nuclei can laterally overgrow the oxide. Consequently, the local composition of the amorphous layer varies with the nature of the substrate.

(Digital Presentation) On Epitaxial Electrodeposition of Co, Ru and Cu for Interconnect Applications

Review—On Epitaxial Electrodeposition of Co, Cu, and Ru for Interconnect Applications

Epitaxial metals for interconnects beyond Cu

Direct copper plating on ultra-thin sputtered cobalt film in an alkaline bath

Structure and Properties of Electrocodeposited Cu-Al2o3 Nanocomposite Thin Films

EPITAXIAL GROWTH OF CUPROUS OXIDE ELECTRODEPOSITED ONTO SEMICONDUCTOR AND METAL SUBSTRATES

XRD Study on Cu Layer in IC Interconnect

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Epitaxial Metal Electrodeposition Controlled by Graphene Layer Thickness

The Influence of Graphene on the Electrodeposition of Metals

Electrodeposition of (111)-oriented and nanotwin-doped nanocrystalline Cu with ultrahigh strength for 3D IC application

Control of Cu morphology on TaN barrier and combined Ru-TaN barrier/liner substrates for nanoscale interconnects from atomistic kinetic Monte Carlo simulations

Nucleation of Co and Ru Precursors on Silicon with Different Surface Terminations: Impact on Nucleation Delay.

Droplet-confined electroplating for nanoscale additive manufacturing: current control of the initial stages of the growth of copper nanowires

Resistivity size effect in epitaxial face-centered cubic Co(001) layers

Lifting Polyether Suppression during Cu Electrodeposition

Surface Atom Migration-involved Two-dimensional Nucleation and Growth of Nanotwinned Copper in DC Electrodeposition

In Situ Study of Copper Electrodeposition on A Single Carbon Fiber

Mechanisms of Scaling Effect for Emerging Nanoscale Interconnect Materials

Ultra-high flatness and conductivity of copper electrodeposits obtained by nano-twinned/fine-grained double layer electrodeposition

Area Selective Deposition of Ru on W/SiO2 Nanopatterns Via Sequential Reactant Dosing and Thermal Defect Correction