Abstract:The deposition of nanoscaled structures with a desired shape on the intended position of the substrate material is crucial for nanomaterial applications. Electron beam-induced deposition with a highly focused beam enables achievement of high accuracy and precision in this respect. Hence, we investigated the focused-electron-beam-induced deposition of Ru-containing deposits on SiO2 and sputter-cleaned silicon in ultrahigh vacuum to achieve comparably clean and morphologically well-defined Ru nanomaterials, which is relevant especially in the field of mask repair for extreme ultraviolet lithography. The precursor Ru(CO)4I2 was held at 340–345 K, and the applied electron doses were varied from 1.56 to 9.36 C/cm2 using a focused electron beam (5 keV, 1.5 nA, and 10 nm diameter). Local Auger electron spectroscopy along with subsequent sophisticated fitting procedures not only revealed the elemental composition but also enabled determination of the thickness of the fabricated deposits. Ru contents of up to 56% can be achieved at lower electron doses; at higher doses, the Ru content decreases to 45% and simultaneously the content increases. The initially lower I content is attributed to simultaneous focused electron beam-induced etching, which is found to be competing with the deposition process. The etching is evidenced by atomic force microscopy, where the structures are observed to have negative apparent height for low electron doses. With increasing electron doses, the deposits exhibit positive apparent heights because the etching is less pronounced at higher electron doses, once the Ru surface coverage has increased. The high Ru content and difficult balance between electron-induced deposition and etching considerably expand the possibilities of engineering nanostructured materials.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.1c04481.AES on a Ru crystal before and after sputtering (Figure S1), AES on a clean Ru crystal with E × N(E) versus E and dN/dE versus E signal types (Figure S2), AES on clean Ag and Ru substrates with E × N(E) versus E and dN/dE versus E signal types (Figure S3), AES on the SiO2 substrate before and after sputtering (Figure S4), AES intensities of the SiMNN peak (1615 eV) under different electron doses (Figure S5), AES damping SiMNN signal for clean Si and 5 and 3 keV FEBID structures (Figure S6), calculations for the precursor flux and current density (Section S1), and calculations for the attenuation length, thickness estimation, and information depth (Section S2) (PDF)This article has not yet been cited by other publications.

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