Abstract:Area-selective atomic layer deposition (AS-ALD) is a highly sought-after strategy for the fabrication of next-generation electronics. This work reveals how key precursor design parameters strongly influence the efficacy of AS-ALD by comparing a series of precursors possessing the same metal center but different ligands. When the number of methyl and chloride groups in Al(CH3)xCl3–x (x = 0, 2, and 3) and the chain length of alkyl ligands in AlCyH2y+1 (y = 1 and 2) are changed, the effect of precursor chemistry (reactivity and molecular size) on the selectivity is elucidated. The results show that optimized parameters for the Al2O3 ALD processes on a self-assembled monolayer (SAM)-terminated substrate, which serves as the nongrowth surface, differ significantly from those on a Si substrate. Chlorine-containing precursors need a much longer purging time on the SAMs because of a stronger Lewis acidity compared to that of alkyl precursors. With reoptimized conditions, the ALD of Al2O3 using the Al(C2H5)3 precursor is blocked most effectively by SAM inhibitors, whereas the widely employed Al(CH3)3 precursor is blocked least effectively among the precursors tested. Finally, we show that a selectivity exceeding 0.98 is achieved for up to 75 ALD cycles with Al(C2H5)3, for which 6 nm of Al2O3 film grows selectively on SiO2-covered Si. Quantum chemical calculations show significant differences in the energetics of dimer formation across the Al precursors, with only ∼1% of AlCl3 and Al(CH3)2Cl precursors but 99% of the alkyl precursors, Al(CH3)3 and Al(C2H5)3, existing as monomers at 200 °C. We propose that a combination of precursor reactivity and effective molecular size affects the blocking of the different precursors, explaining why Al(C2H5)3, with weaker Lewis acidity and relatively large size, exhibits the best blocking results.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c04718?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c04718</a>.WCA with increasing ALD cycle number (Figure S1); growth per cycle of Al2O3 on Si as a function of precursor purging time (Figure S2); amount of Al/(Al + Si) and Al/(Al + Au) for AlCl3 and Al(CH3)3 on ODTS/Si and ODT/Au (Figure S3) (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04718/suppl_file/cm0c04718_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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