Abstract:Interface layers between reactive and energetic materials in nanolaminates or nanoenergetic materials are believed to play a crucial role in the properties of nanoenergetic systems. Typically, in the case of Metastable Interstitial Composite nanolaminates, the interface layer between the metal and oxide controls the onset reaction temperature, reaction kinetics, and stability at low temperature. So far, the formation of these interfacial layers is not well understood for lack of in situ characterization, leading to a poor control of important properties. We have combined in situ infrared spectroscopy and ex situ X-ray photoelectron spectroscopy, differential scanning calorimetry, and high resolution transmission electron microscopy, in conjunction with first-principles calculations to identify the stable configurations that can occur at the interface and determine the kinetic barriers for their formation. We find that (i) an interface layer formed during physical deposition of aluminum is composed of a mixture of Cu, O, and Al through Al penetration into CuO and constitutes a poor diffusion barrier (i.e., with spurious exothermic reactions at lower temperature), and in contrast, (ii) atomic layer deposition (ALD) of alumina layers using trimethylaluminum (TMA) produces a conformal coating that effectively prevents Al diffusion even for ultrathin layer thicknesses (∼0.5 nm), resulting in better stability at low temperature and reduced reactivity. Importantly, the initial reaction of TMA with CuO leads to the extraction of oxygen from CuO to form an amorphous interfacial layer that is an important component for superior protection properties of the interface and is responsible for the high system stability. Thus, while Al e-beam evaporation and ALD growth of an alumina layer on CuO both lead to CuO reduction, the mechanism for oxygen removal is different, directly affecting the resistance to Al diffusion. This work reveals that it is the nature of the monolayer interface between CuO and alumina/Al rather than the thickness of the alumina layer that controls the kinetics of Al diffusion, underscoring the importance of the chemical bonding at the interface in these energetic materials.

Thermal ALD of Cu via reduction of Cu xO films for the advanced metallization in spintronic and ULSI interconnect systems

ALD-grown Seed Layers for Electrochemical Copper Deposition Integrated with Different Diffusion Barrier Systems

Cu$_x$Al$_{1-x}$ films as Alternatives to Copper for Advanced Interconnect Metallization

On the Mechanism of the Atomic Layer Deposition of Cu Films on Silicon Oxide Surfaces: Activation Using Atomic Hydrogen and Three-Dimensional Growth

Impact of Surface Hydroxyl Groups on CuO Film Growth by Atomic Layer Deposition

Cu and Cu(Mn) Films Deposited Layer-by-layer Via Surface-Limited Redox Replacement and Underpotential Deposition

The Inhibition of Enhanced Cu Oxidation on Ruthenium∕Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru

Metal Exchange and Diffusion during Atomic Layer Deposition of Cobalt and Nickel Sulfides

Electroless Cu Deposition Process on TiN for ULSI Interconnect Fabrication Via Pd/Sn Colloid Activation

Study on Electroless Deposition Using Glyoxylic Acid As Reducing Agent for Copper Interconnection

Role of Interfaces in the Thermal Reduction Process of the FeO/Cu2O/Cu(100) Surface

Atomic Layer Infiltration Enabled Cu Coordination Environment Construction for Enhanced Electrochemical CO<sub>2</sub> Reduction Selectivity: Case Study of a Cu Metal–Organic Framework

Interfacial chemistry in Al/CuO reactive nanomaterial and its role in exothermic reaction

Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties

Emerging Non-Noble-Metal Atomic Layer Deposited Copper as Seeds for Electroless Copper Deposition

Atomic layer deposition of copper and copper silver films using an electrochemical process

Atomic Layer Infiltration Enabled Cu Coordination Environment Construction for Enhanced Electrochemical CO2 Reduction Selectivity: Case Study of a Cu Metal–Organic Framework

Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma

Tunable Sulfur Incorporation into Atomic Layer Deposition Films Using Solution Anion Exchange

Control of Cu morphology on TaN barrier and combined Ru-TaN barrier/liner substrates for nanoscale interconnects from atomistic kinetic Monte Carlo simulations

Self-aligned Patterning of Tantalum Oxide on Cu/SiO2 Through Redox-Coupled Inherently Selective Atomic Layer Deposition.