A Simple Technique for Sub-10 Nm Planar Nanofluidic Channel Fabrication

Song Chunrong,Wang Pingshan
DOI: https://doi.org/10.1557/proc-1222-dd05-08
2009-01-01
Abstract:A simple and low-cost technique is demonstrated to fabricate sub-10 nm planar nanofluidic channels. Native oxide on silicon surface is etched with a multiple hydrofluoric (HF)-etch / SiO2-regrowth process. Shallow Si trenches with 3 nm to 24 nm depths are obtained at an etch rate of 1 nm per HF dip. The trenches are uniform with a surface r.m.s. roughness of 0.4 - 0.6 nm. A low-temperature and low-voltage anodic wafer bonding process is then used to form planar nanofluidic channels. Minimum aspect ratio (depth/width) of the fabricated sub-10 nm nanochannels is around 0.001-0.002.
What problem does this paper attempt to address?