Fabrication of Sub-10 Nm Planar Nanofluidic Channels Through Native Oxide Etch and Anodic Wafer Bonding

Chunrong Song,Pingshan Wang
DOI: https://doi.org/10.1109/tnano.2009.2038377
2010-01-01
IEEE Transactions on Nanotechnology
Abstract:A simple, multiple-hydrofluoric (HF)-dip process is developed and characterized to etch native silicon-dioxide (SiO2) to obtain shallow silicon trenches. The room-temperature SiO2 grow-etch-grow process yields an etch rate of similar to 1 nm/HF-dip with atomically smooth trench surface. Low-temperature, low-voltage anodic bonding yields sub-10 nm deep planar nanochannels with aspect ratios as small as 0.002.
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