Abstract:Multi-level memory can greatly improve information density, so it has been widely studied. In this study, a carbazole-based donor-acceptor polymer poly[2,7-9-(heptadecan-9-yl)-9H-carbazole-alt-7H-benzimidazo[2,1-a]benz[de]isoquinolin-7-one] (PCz-BB) is synthesized, which exhibits flash-type ternary memory behavior. Further, CdS nanoparticles (NPs) are embedded into the prepared polymer to enhance the storage performance. The current-voltage (I-V) characteristics of memory devices based on PCz-BB:CdS composites and the effect of the embedding ratio of CdS NPs on the memory devices are studied. It is verified that the ON2/ON1/OFF current ratios of the devices at low CdS embedding concentrations are improved, and the threshold voltages are also reduced. The memory device based on the optimal embedding concentration (3 wt% CdS) exhibits a high ON2/ON1/OFF current ratio of 18631:72:1, a low threshold voltage of -0.40/-1.20 V, and excellent stability. The mechanism of resistive switching is explained by the theory of charge traps and conductive filaments. This work provides a new avenue for high-performance multi-level organic electrical storage materials.

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Memory Effect of Nonvolatile Bistable Devices Based on CdSe∕ZnS Nanoparticles Sandwiched Between C60 Layers

Nonvolatile Electrical Bistability and Operating Mechanism of Memory Devices Based on CdSe/ZnS Nanoparticle/polymer Hybrid Composites

Nonvolatile Memory Devices Based on Zno/Polyimide Nanocomposite Sandwiched Between Two C-60 Layers

Memory Effect of CdSe∕ZnS Nanoparticles Embedded in a Conducting Poly[2-Methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] Polymer Layer

Carrier Transport Mechanisms Of Nonvolatile Memory Devices Based On Nanocomposites Consisting Of Zno Nanoparticles With Polymethylmethacrylate Nanocomposites Sandwiched Between Two C-60 Layers

Carrier Transport and Memory Mechanisms of Multilevel Resistive Memory Devices with an Intermediate State Based on Double-Stacked Organic/Inorganic Nanocomposites

Carrier Transport Mechanisms of Bistable Memory Devices Fabricated Utilizing Core–shell CdSe/ZnSe Quantum-Dot/multi-walled Carbon Nanotube Hybrid Nanocomposites

Nonvolatile Memory Effects of ZnO Nanoparticles Embedded in an Amorphous Carbon Layer

Memory Effects Related To Deep Levels In Metal-Oxide-Semiconductor Structure With Nanocrystalline Si

Carrier Transport Mechanisms of the Writing and the Erasing Processes for Al/ZnO Nanoparticles Embedded in a Polymethyl Methacrylate Layer/c60/p-Si Diodes.

Organic Bistable Devices Based on Core/shell CdSe∕ZnS Nanoparticles Embedded in a Conducting Poly(n-Vinylcarbazole) Polymer Layer

Abnormal capacitance hysteresis phenomena in stacked nanocrystalline-Si based metal insulator semiconductor memory structure

Nonvolatile Multilevel Conductance and Memory Effect in Molecule-Based Devices

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

Electrical Bistabilities and Operating Mechanisms of Memory Devices Fabricated Utilizing Zno Quantum Dot-Multi-Walled Carbon Nanotube Nanocomposites

Formation and Electrical Bistability Properties of Zno Nanoparticles Embedded in Polyimide Nanocomposites Sandwiched Between Two C-60 Layers

Organic Bistable Memory Based On Au Nanoparticle/Zno Nanorods Composite Embedded In Poly (Vinylpyrrolidone) Layer

High-Performance C 60 Coupled Ferroelectric Enhanced MoS 2 Nonvolatile Memory