Abstract:Realization of ferroelectric semiconductors by conjoining ferroelectricity with semiconductors remains a challenging task because most present-day ferroelectric materials are unsuitable for such a combination due to their wide bandgaps. Herein, we show first-principles evidence toward the realization of a new class of two-dimensional (2D) ferroelectric semiconductors through covalent functionalization of many prevailing 2D materials. Members in this new class of 2D ferroelectric semiconductors include covalently functionalized germanene, and stanene (Nat. Commun. 2014, 5, 3389), as well as MoS2 monolayer (Nat. Chem. 2015, 7, 45), covalent functionalization of the surface of bulk semiconductors such as silicon (111) (J. Phys. Chem. B 2006, 110 , 23898), and the substrates of oxides such as silica with self-assembly monolayers (Nano Lett. 2014, 14, 1354). The newly predicted 2D ferroelectric semiconductors possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac Fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and nondestructive reading capability of nonvolatile memory, thereby holding great potential for the development of future multifunctional devices.

Interfacing Solution-Grown C-60 and (3-Pyrrolinium)(cdcl3) Single Crystals for High-Mobility Transistor-Based Memory Devices

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Ferroelectric-carbon Nanotube Memory Devices.

Enhanced performance of field-effect transistors based on C 60 single crystals with conjugated polyelectrolyte

Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Speed Up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

Conjugated polymers with cationic iridium(iii) complexes in the side-chain for flash memory devices utilizing switchable through-space charge transfer

High-Performance C 60 Coupled Ferroelectric Enhanced MoS 2 Nonvolatile Memory

Memory Devices Based on Lanthanide (sm3+, Eu3+, Gd3+) Complexes

Ferroelectric Field-Effect Transistors Based on WSe 2 /CuInP 2 S 6 Heterostructures for Memory Applications

Solution-grown aligned C60 single-crystals for field-effect transistors

Precision Construction of High-Efficiency Heterojunction Polymer Memory Devices Via Electrochemical Polymerization

Charge-Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices

Nonvolatile Multilevel Conductance and Memory Effect in Molecule-Based Devices

Ferroelectricity in Covalently Functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

Single-Crystalline Nanowires of Molecular Ferroelectric Semiconductors for Optoelectronic Memory

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers.