Abstract:Realization of ferroelectric semiconductors by conjoining ferroelectricity with semiconductors remains a challenging task because most present-day ferroelectric materials are unsuitable for such a combination due to their wide bandgaps. Herein, we show first-principles evidence toward the realization of a new class of two-dimensional (2D) ferroelectric semiconductors through covalent functionalization of many prevailing 2D materials. Members in this new class of 2D ferroelectric semiconductors include covalently functionalized germanene, and stanene (Nat. Commun. 2014, 5, 3389), as well as MoS2 monolayer (Nat. Chem. 2015, 7, 45), covalent functionalization of the surface of bulk semiconductors such as silicon (111) (J. Phys. Chem. B 2006, 110 , 23898), and the substrates of oxides such as silica with self-assembly monolayers (Nano Lett. 2014, 14, 1354). The newly predicted 2D ferroelectric semiconductors possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac Fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and nondestructive reading capability of nonvolatile memory, thereby holding great potential for the development of future multifunctional devices.

Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications

Non-volatile Memory with Self-Assembled Ferrocene Charge Trapping Layer

Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

A Silicon-Based Ferroelectric Capacitor for Memory Devices

Ferrocenyl Self-Assembled Monolayer On Silicon Surfaces: Preparation And Current-Voltage Measurement

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

Ferroelectricity in Covalently Functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

Interfacing Solution-Grown C-60 and (3-Pyrrolinium)(cdcl3) Single Crystals for High-Mobility Transistor-Based Memory Devices

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Logic Compatible High-Performance Ferroelectric Transistor Memory

A ferroelectric fin diode for robust non-volatile memory

A Silicon-Based Pt/Pzt/Pt Sandwich Structure For Memory Devices

Flexible Robust and High-Density FeRAM from Array of Organic Ferroelectric Nano-Lamellae by Self-Assembly.

Ferroelectric FET for Nonvolatile Memory Application with Two-Dimensional MoSe 2 Channels

Interfacial-Layer-Free Ge$_{\text{0.95}}$Si$_{\text{0.05}}$ Nanosheet FeFETs

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors