Abstract:Binary data in 1T1C or 2T2C non-volatile ferroelectric random access memories, which are represented by the polarization charges of switching and non-switching events, are retrieved when a reading current pulse exceeds the sense amplifier threshold for discrimination of nonswitching pulses, and a reset pulse is required after the destructive readout. Downscaling the dimensions of such memory cells reduces the measurable polarization charge proportional to the capacitor area, and data are no longer detected reliably in high-density memories. The nondestructive readout of the binary information is possible from the high- and low-conductance bipolar switching of a ferroelectric diode under two opposite poling fields, where the direction of the diode effect switches with polarization reversal. Our study of BiFeO3 thin-film capacitors shows measured polarization-modulated diode currents for encoding information within high-density memories. We used two in-plane nano-electrodes fabricated on the film surface in gaps of a few tens of nanometers. As an in-plane field is applied antiparallel to the domain orientation above a coercive field, the partial domains near the film surface layer are switched firstly to form conductive charged walls with respect to the underlying unswitched bulk matrix, so that we can observed an "on" current from current-voltage loops. As the switching field is high enough, the underlying domains throughout the whole film thickness are switched. In this case, there was no charged domain wall, and thus, we observed an "off' current. Both "on" and "off' currents with the ratio of 100 are stable over laboratory time with write cycles larger than 2x10(5) and write time as short as 10 ns, which provide the proof of ferro-resistive switching and independent adjustments of ferroelectricity and conductivity in a single-phase ferroelectric in promotion of the integration density of the memory with high performance.

A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

High-Desity Nonvolatile Ferroelectric Resisitive Memory

Local On/Off Currents in BiFeO3 Thin Films Modulated by Bipolar Polarization Orientations

Tuning the Resistive Switching Memory in a Metal–ferroelectric–semiconductor Capacitor by Field Effect Structure

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Ferroelectric and Flexible Barrier Resistive Switching of Epitaxial BiFeO 3 Films Studied by Temperature-Dependent Current and Capacitance Spectroscopy

Ferroelectric Diode-Like Resistive Switching Behavior in Bi0.95Er0.05FeO3/CuFe2O4 Heterostructures for Non-Volatile Memories

Fabrication And Properties Of Pt/Bi3.15nd0.85ti3o12/Hfo2/Si Structure For Ferroelectric Dram (Fedram) Fet

A ferroelectric fin diode for robust non-volatile memory

Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes

Ferroelectric Polarization and Conductance Filament Coupling for Large Window and High-Reliability Resistive Memory and Energy-Efficient Synaptic Devices

Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

A Silicon-Based Ferroelectric Capacitor for Memory Devices

Domain Switching Kinetics in Ferroelectric-Resistive BiFeO3 Thin Film Memories

Nonvolatile Electric‐Optical Memory Controlled by Conductive Filaments in Ti‐Doped BiFeO3

In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Non-volatile Memory Based on the Ferroelectric Photovoltaic Effect

Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory

Temporary Formation of Highly Conducting Domain Walls for Non-Destructive Read-out of Ferroelectric Domain-Wall Resistance Switching Memories.