Abstract:The successful development of 2D ferroelectric metal‐organic frameworks (MOF) nanosheets, with a large polarization retained down to 7 nm, enables the fabrication of ferroelectric field effect transistors (FeFETs) with ultralow power consumption and tunable memory windows, ideal for next‐generation memory, and computing devices. 2D ferroelectrics open a new realm of nonvolatile memory and computing devices, while metal–organic frameworks (MOF) offer tremendous possibilities to design and optimize ferroelectric performance. Integrating a MOF ferroelectric gate with a semiconducting channel provides new strategy toward ultralow power ferroelectric field effect transistors (FeFETs), yet no 2D MOF is experimentally demonstrated to be ferroelectric yet. Here, the study successfully develops 2D ferroelectric MOF nanosheets, {CuL2(H2O)2(NO3)2(H2O)1.5·(CH3OH)}∞ wherein L denotes PhPO(NH4Py)2, abbreviated as {CuIIL2}n‐MOF, and confirm its ferroelectricity down to 7 nm thickness. A large polarization of ≈14.2 μC cm−2, small coercive field of ≈33.3 V μm−1, and excellent endurability >106 cycles are found in 2D {CuIIL2}n‐MOF nanosheets. This enables to fabricate FeFETs using 2D {CuIIL2}n‐MOF as the gate and MoS2 as the channel, achieving an on/off ratio of 107 with ultralow off‐state current of 100 fA and tunable memory window, making it exceptional among known FeFETs and very promising for next‐generation ultralow power memories and computing devices

Interfacial-Layer-Free Ge$_{\text{0.95}}$Si$_{\text{0.05}}$ Nanosheet FeFETs

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Logic Compatible High-Performance Ferroelectric Transistor Memory

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer

2D Ferroelectric Metal–Organic Frameworks for Ultralow Power Field Effect Transistors

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

HfO 2 -based Junctionless FeFET Array on FDSOI Platform for NAND Memory Application

Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs

First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window