High-performance multilevel nonvolatile organic field-effect transistor memory based on multilayer organic semiconductor heterostructures
Yangzhou Qian,Jiayu Li,Wen Li,Ziyi Song,Hao Yu,Ziyi Feng,Wei Shi,Wei Huang,Ming-Dong Yi
DOI: https://doi.org/10.1039/d4tc02842b
IF: 6.4
2024-09-10
Journal of Materials Chemistry C
Abstract:Nonvolatile organic field-effect transistor (OFET) memory devices have great potential for next-generation memory due to their advantages of low cost, light weight, mechanical flexibility and easy processing. However, addressing the issue of limited data storage capacity remains a critical challenge. In this study, we propose a multilevel nonvolatile OFET memory device featuring five-layer organic semiconductor heterostructures composed of pentacene and N , N ′-ditridecylperylene-3,4,9,10-tetracarb-oxylic diimide (P13). The innovative semiconductor heterostructures exhibit quantum well-like characteristics, and efficiently function as charge trapping sites. These characteristics synergize with the charge trapping properties of the polystyrene (PS) layer, resulting in a significant enhancement of the device's charge storage capacity. The organic semiconductor heterostructure-based memory device demonstrates exceptional nonvolatile memory properties, including a large charge storage capacity (5.48 × 10 12 cm −2 ), a high mobility (2.06 cm 2 V −1 s −1 ), a high ON/OFF current ratio (10 5 ), and a long data retention (over 10 4 s). Moreover, a four-level data storage was achieved owing to the device's high charge capacity properties, significantly augmenting memory capacity. This research presents a promising methodology for the realization of high-performance organic memory for future technology.
materials science, multidisciplinary,physics, applied