Abstract:The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

An Electrogenerated Chemical-Oxidation-Driving Nonvolatile Plastic Memory Device with the Conjugated Polymer/Carbon Nanotube Blend

Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of N‐Vinylcarbazole and Eu‐Complexed Vinylbenzoate

Light-/steam-driven Polymeric Crosslinking with Porous Multistructure Pattern for Ultrastable and Fast-Speed Memory

Thermally Stable Polymer Memory Devices Based on a Π-Conjugated Triad

Nonvolatile Polymer Memory Device Based on Bistable Electrical Switching in A Thin Film of Poly(N-Vinylcarbazole) with Covalently Bonded C-60

Bistable Electrical Switching And Write-Once Read-Many-Times Memory Effect In A Donor-Acceptor Containing Polyfluorene Derivative And Its Carbon Nanotube Composites

Fluorinated Quinoxaline-Based Conjugated Polymers for High-Density Nonvolatile Memory Devices

Transient and Flexible Polymer Memristors Utilizing Full-Solution Processed Polymer Nanocomposites.

Control over the interface properties of carbon nanotube-based optoelectronic memory devices

Bilayer Memory Device Based on a Conjugated Copolymer and a Carbon Nanotube/Polyaniline Composite

An electrospun polymer composite with fullerene-multiwalled carbon nanotube exohedral complexes can act as memory device

A carbonyl-decorated two-dimensional polymer as a charge-trapping layer for non-volatile memory storage devices with a high endurance and wide memory window

Electrochemical Fabrication of A Memory Device Based on Conducting Polymer Nanocomposites

Molecular Floating-Gate Organic Nonvolatile Memory With A Fully Solution Processed Core Architecture

Design and synthesis of conjugated polymers containing Pt(ii) complexes in the side-chain and their application in polymer memory devices

Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High Performance Flash Memory.

Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly (N-Vinylcarbazole) Composite

Conjugated Polymer with On‐Chain Pt(II) Complex for Resistive Random‐Access Memory Device

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Multifunctional Polymer Memory via Bi-Interfacial Topography for Pressure Perception Recognition.