Electrochemical Fabrication of A Memory Device Based on Conducting Polymer Nanocomposites

Qi Chen,Lu Zhao,Chun Li,Gaoquan Shi
DOI: https://doi.org/10.1021/jp075988z
2007-01-01
Abstract:Memory devices with sandwiched structures were fabricated by electrochemical deposition of the active layers onto indium tin oxide substrates. The active layers with thicknesses of 240-280 nm were composed of poly-(3-hexylthiohene) and gold nanoparticles (GNPs), in which the GNP content was around 9 wt %. The devices exhibited an on/off conductivity ratio of 10(4) and can be read for over 10(4) times without a distinct performance decrease even after being stored in air without packing for over 1 month.
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