Forming-Free Resistive Switching Memory Based on Lifepo4 Nano-Particle Embedded in Conjugated Polymer

Jun Liang,YanTao Su,Qinxian Lin,Hang Zhou,ShengDong Zhang,Yanli Pei,RuiQin Hu
DOI: https://doi.org/10.1088/0268-1242/29/11/115029
IF: 2.048
2014-01-01
Semiconductor Science and Technology
Abstract:In this paper, we report the resistive switching characteristics of organic-inorgainc nanocomposite layer of LiFePO4 nano-particle (NP) embedded in conjugated polymer P3HT (P3HT:LiFePO4-NP). Memory devices with Al/P3HT/P3HT:LiFeP4-NP/ITO structure exhibit forming-free bipolar resistive switching behavior under bias voltage sweeping. Our devices achieved low set (<= 1.2 V) and reset voltage (<= 0.7 V), excellent data retention, high memory margin of more than 10(5) on/off resistance ratio and data endurance >100 times, indicating their great potential for memory application. The resistive switching mechanism was investigated by c-AFM measurement and temperature-current dependence results based on conductive filament model. It is deduced that the metallic filament was formed by diffusion and redox of Li+ ion under bias.
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