Abstract:The resistive switching memory effects in metal-insulator-metal devices with aluminium (Al) as top electrode (TE) and bottom electrode (BE). A solution processed active layer consisting of zinc oxide (ZnO) nanoparticles embedded in an insulating polyvinyl alcohol (PVA) matrix and polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has been studied by using flexible polyethylene terephthalate (PET) substrates. The current-voltage (I-V) measurements of hybrid Al/ZnO-PVA/PEDOT:PSS/Al/flexible PET substrate device exhibited a non-volatile bistable resistive switching behaviour, which is attributed to the trapping, storage and transport of charges in the electronic states of the ZnO nanoparticles. The performance of hybrid device is significantly enhanced over control Al/PEDOT:PSS/Al and Al/ZnO-PVA/Al devices due the presence of PEDOT:PSS polymer. This PEDOT:PSS improves the performance of oxygen ions (holes) migration toward BE and protect back oxygen vacancies (electrons) migrate toward BE from ZnO-PVA composites which may reduces the leakage current, as a result, increased the 'ON state/OFF state' current ratio of 7.9 × 103 times. The fabricated hybrid device showed high ON/OFF switching current ratio larger than five orders of magnitude with low operating voltages. It is observed that, the existence of two conducting states, namely, low conductivity state (OFF state) and high conductivity state (ON state), exhibiting bistable behaviour. The state of the device was maintained even after removal of the applied bias, indicating the non-volatile memory. The observed current-time response showed good memory retention behaviour of the fabricated devices. The excellent stability and retention performances of hybrid device verify the reliability of this device and demonstrate their potential for application in non-volatile bistable memory device. The carrier transport mechanism of the bistable behaviour for the fabricated non-volatile organic bistable devices structures is described on the basis of the I-V experimental results by analyzing the effect of space charge and electronic structure. Interestingly, the device performance was not degraded and remains identical even after bending the device from 60-120° angles, which indicates high potential for flexible non-volatile bistable memory device applications. This demonstration provides a class of memory devices with the potential for future flexible electronics applications.

Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

High Performance Resistive Switching Memory Organic Films Prepared Through PPy Growing on Graphene Oxide Substrate

High-Performance Resistance-Switchable Multilayers Of Graphene Oxide Blended With 1,3,4-Oxadiazole Acceptor Nanocomposite

Graphene Oxide and Tio2 Nano-Particle Composite Based Nonvolatile Memory

Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

Nonvolatile resistance switching memory devices fabricated from the photopolymerized poly( N -vinylcarbazole)-graphene oxide composites

Retention Behavior of Graphene Oxide Resistive Switching Memory on Flexible Substrate

Bipolar Resistive Switching in Cu/Aln/Pt Nonvolatile Memory Device

Enabling Superior Stretchable Resistive Switching Memory Via Polymer-Functionalized Graphene Oxide Nanosheets

The Mechanism of the Asymmetric Set and Reset Speed of Graphene Oxide Based Flexible Resistive Switching Memories

Bistable Electrical Switching And Electronic Memory Effect In A Solution-Processable Graphene Oxide-Donor Polymer Complex

Preparation of Graphene Oxide-Polypyrrole-polyvinylferrocene Ternary Nanocomposite and Its Resistive-Switching Characteristic

Preparation of Graphene Oxide/Poly(1-vinylimidazole) Composites for Resistive Switching Memory.

Push–Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory

Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)

Nonvolatile Rewritable Memory Effects in Graphene Oxide Functionalized by Conjugated Polymer Containing Fluorene and Carbazole Units

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Resistive Switching Induced by Metallic Filaments Formation Through Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate)

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor