Abstract:Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is scarce. Here we fabricated GO-based RRAM devices with gold nanoparticles (Au Nps). Diverse types of switching behavior are observed by changing the processing methods and device geometry. Tri-layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar and bipolar switching. Five-layer GO-based devices depicted complementary resistive switching having the lowest current values ~12 µA; and this structure is capable of resolving the sneak path issue. Both devices show good retention and endurance performance. Au Nps in tri-layer devices assisted the conducting path, whereas in five-layer devices, Au Nps layer worked as common electrodes between co-joined cells. These GO-based devices with Au Nps comprising different configuration are vital for practical applications of emerging non-volatile resistive memories.

Preparation of Graphene Oxide/Poly(1-vinylimidazole) Composites for Resistive Switching Memory.

Preparation of Graphene Oxide-Polypyrrole-polyvinylferrocene Ternary Nanocomposite and Its Resistive-Switching Characteristic

The preparation of water-dispersible graphene oxide/conjugated polymer nanocomposite and the nonvolatile resistive switching memory properties

High Performance Resistive Switching Memory Organic Films Prepared Through PPy Growing on Graphene Oxide Substrate

Nonvolatile resistance switching memory devices fabricated from the photopolymerized poly( N -vinylcarbazole)-graphene oxide composites

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Graphene Oxide and Tio2 Nano-Particle Composite Based Nonvolatile Memory

One-step Preparation of Graphene Oxide–poly(3,4 Ethylenedioxythiophene) Composite Films for Nonvolatile Rewritable Memory Devices

Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices

Preparation of MoS₂-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes.

Retention Behavior of Graphene Oxide Resistive Switching Memory on Flexible Substrate

Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Stable Resistive Switching in ZnO/PVA:MoS<sub>2</sub> Bilayer Memristor

Electrical Characteristics and Carrier Transport Mechanisms of Write-Once-read-many-times Memory Elements Based on Graphene Oxide Diodes

Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

A Facile Approach to Synthesize an Oxo-Functionalized Graphene/polymer Composite for Low-Voltage Operating Memory Devices

Graphene oxide for nonvolatile memory application by using electrophoretic technique

Bulk Heterojunction Polymer Memory Devices With Reduced Graphene Oxide As Electrodes

Role of tunneling layer in graphene-oxide based organic nonvolatile memory transistors

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.