Abstract:Highly flexible, nonvolatile resistive switching-based memory devices with a hierarchical thin-film architecture were fabricated using a low-temperature, cost-efficient solution processing technique. The device structure consists of an ITO-coated flexible PET substrate as the bottom electrode and a PMMA-embedded reduced-graphene/ZnO nanoparticle (NP) (rGO/ZnO NP) heterostructure as the flexible active layer. Besides, a PMMA-embedded graphene oxide (GO/PMMA)-based device was also fabricated as a reference. The operating voltage of this device is limited within ±2 V, whereas the ON/OFF current ratio is ∼106, which is ∼103 times higher than the reference device. The device also exhibited excellent endurance and retention characteristics, with no significant degradation for more than 50 cycles. Besides, the retention time of this device is ∼104 s, which is several times more than that of the reference device. These electrical performance enhancements were attributed to the multifunctionality introduced by the rGO/ZnO NP heterostructures, which combine the excellent conductivity of rGO nanosheets with charge trapping and transport properties and high electron mobility of ZnO nanostructures. A model based on the energy band of the components of this composite material has been proposed for a better understanding of this mechanism. Flexibility studies exhibited stable device performance for an extreme bending radius of 6 mm. The resistance of the device in ON and OFF states did not show any significant change even after 1000 bending cycles, thus establishing the device as an excellent memory candidate for flexible electronic applications such as flexible displays and sensors, wearable devices, implantable medical devices, and portable diagnostic devices.

Retention Behavior of Graphene Oxide Resistive Switching Memory on Flexible Substrate

The Mechanism of the Asymmetric Set and Reset Speed of Graphene Oxide Based Flexible Resistive Switching Memories

Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices

Temperature Dependence of Resistive Switching Behaviors in Resistive Random Access Memory Based on Graphene Oxide Film.

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Graphene oxide for nonvolatile memory application by using electrophoretic technique

The Nano-Scale Resistive Memory Effect of Graphene Oxide

Flexible, Multilevel, and Low-Operating-voltage Resistive Memory Based on MoS2–rGO Hybrid

Graphene Oxide and Tio2 Nano-Particle Composite Based Nonvolatile Memory

Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing

Improvement of switching uniformity in TiO 2 -based resistive random access memory with graphene oxide embedded film

Oxide Resistive Memory with Functionalized Graphene As Built-In Selector Element

High Performance Resistive Switching Memory Organic Films Prepared Through PPy Growing on Graphene Oxide Substrate

Highly Flexible Non-Volatile Resistive Memory Devices Based on ZnO Nanoparticle/Graphene Heterostructures Embedded in Poly(methyl methacrylate)

From dead leaves to sustainable organic resistive switching memory

Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature

Memory Behaviors Based on ITO/Graphene Oxide/Al Structure

Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices

Preparation of Graphene Oxide/Poly(1-vinylimidazole) Composites for Resistive Switching Memory.

Highly Improved Performance in Zr0.5Hf0.5O2 Films Inserted with Graphene Oxide Quantum Dots Layer for Resistive Switching Non-Volatile Memory

Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication