Improvement of switching uniformity in TiO 2 -based resistive random access memory with graphene oxide embedded film

Weijie Jia,Lifang Hu,Wei Gao,Wenjin Mu,Zhao Chou,Xiao Cheng

DOI: https://doi.org/10.1016/j.mssp.2024.108688

IF: 4.1

2024-07-13

Materials Science in Semiconductor Processing

Abstract:TiO 2 -based resistive random access memory (RRAM) devices has the potential to fabricating nonvolatile memory applications. However, the memories based on TiO 2 have severe problems like large resistive switching parameter fluctuations, poor cycling endurance and so on, which can be a limitation of the device in practical applications. Graphene oxide (GO) is a novel material that has attracted much attention and is often applied to enhance the performance of memories due to its own special properties. In this work, two types of bilayer structure based on TiO 2 for RRAM devices were fabricated. The significant improvement in uniformity of operating voltages and high HRS/LRS ratio of the TiO 2 -based RRAM were realized by inserting a two-dimensional GO film between TiO 2 and FTO. The presence of the GO film would prevent the ion exchange between the electrodes and the switching layer as well as its insulating properties. The conduction mechanisms of all the devices in low and high resistance states were dominant by the Ohmic conduction mechanism and the space charge limited conduction mechanism, respectively. This research manifests the promising potential of two-dimensional GO embedded layer for improving resistive switching performance of RRAMs.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied