Abstract:Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

Novel Graphene-Based Resistive Random Access Memory

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Modeling and Simulation of Resistive Random Access Memory with Graphene Electrode

Graphene Resistive Random Memory — the Promising Memory Device in Next Generation

2D Resistive Switching Memories: Graphene and Related Materials for Resistive Random Access Memories (adv. Electron. Mater. 8/2017)

Graphene and Related Materials for Resistive Random Access Memories

Novel 2D Materials-based Resistive Devices

Graphene-based RRAM devices for neural computing

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Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Improvement of switching uniformity in TiO 2 -based resistive random access memory with graphene oxide embedded film

An Overview of Resistive Random Access Memory Devices

Nonvolatile MOX RRAM assisted by graphene and 2D materials

A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode

Monitoring oxygen movement by Raman spectroscopy of resistive random access memory with a graphene-inserted electrode.

MECHANISMS AND MODELING OF 2D-MATERIALS-BASED RESISTIVE RANDOM ACCESS MEMORY DEVICES (INVITED REVIEW)

Electrode/Oxide Interface Engineering By Inserting Single-Layer Graphene: Application For Hfox-Based Resistive Random Access Memory

Graphene oxide for nonvolatile memory application by using electrophoretic technique

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device