Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Nonvolatile MOX RRAM assisted by graphene and 2D materials

Novel 2D Materials-based Resistive Devices

Graphene and Related Materials for Resistive Random Access Memories

2D Resistive Switching Memories: Graphene and Related Materials for Resistive Random Access Memories (adv. Electron. Mater. 8/2017)

Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

Memristive Non-Volatile Memory Based on Graphene Materials

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

The synthesis of MOF nanosheets and their application in MOF-based resistance random access memory devices

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing

2D Molybdenum Disulfide (mos2) Transistors Driving RRAMs with 1T1R Configuration

Novel Graphene-Based Resistive Random Access Memory

Optimizing molybdenum oxide based RRAM with vacuum rapid thermal annealing and carbon quantum dots

Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

Large-area multilayer molybdenum disulfide for 2D memristors

High-performance Ta2O5-based Resistive Random-Access Memory with Embedded Graphene Quantum Dots and Pt-Ag Composite Active Layer

MECHANISMS AND MODELING OF 2D-MATERIALS-BASED RESISTIVE RANDOM ACCESS MEMORY DEVICES (INVITED REVIEW)

Realization of A Non-Markov Chain in A Single 2D Crystal RRAM

Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations