Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Optimizing molybdenum oxide based RRAM with vacuum rapid thermal annealing and carbon quantum dots

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Improved Al2O3 RRAM Performance Based on SiO2/MoS2 Quantum Dots Hybrid Structure

High-performance Ta2O5-based Resistive Random-Access Memory with Embedded Graphene Quantum Dots and Pt-Ag Composite Active Layer

Investigation of Self-Selective RRAM Based on V/ITO Structure with Rapid Thermal Annealed ITO for Synapse Emulation

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

High-performance Resistive Switching Memory with Embedded Molybdenum Disulfide Quantum Dots

Uniformity, Linearity, and Symmetry Enhancement in TiO x /MoS 2- x O x Based Analog RRAM via S-Vacancy Confined Nanofilament

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Improved Switching Reliability Achieved in HfOx Based RRAM with Mountain-Like Surface-Graphited Carbon Layer

Nonvolatile MOX RRAM assisted by graphene and 2D materials

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

Biodegradable transient resistive random-access memory based on MoO3/MgO/MoO3 stack

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Exploring the Effects of Mo Doping on Oxygen Vacancy Formation and Uniformity in HfO2- and ZrO2-Based RRAMs

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Performance Enhancement of Nonvolatile Resistive Switching Memory device Made from WO<sub>X</sub>/ZnO Bilayer Structure

Performance Improvement of CuOx RRAM for Non-volatile Applications