Abstract:The major disadvantages of MXene with abundant low-valence metal species are its poor environmental stability and poor solution processability. The best way to address these problems is to covalently functionalize MXene with highly soluble conjugated polymers, which can not only significantly enhance the environmental stability and solubility of MXene but also further expand its application scope in optoelectronic and electronic devices. By using 4-bromobenzoyl-functionalized MXene (Ti3C2TX) as a key two-dimensional template, poly[(9,9-dihexyl9H-fluorene)-alt-(1,4-diethynylbenzene)] (PDFD) polymer chains were grown directly from the MXene surface via surface-directing Sonogashira-Hagihara polymerization. The achieved PDFD- MXene is highly soluble in common organic solvents. As expected, the as-fabricated Al/PDFD-MXene/ITO device showed bistable electrical switching and nonvolatile resistive random access memory (RRAM) performance. After annealing at 150 degrees C in N2, the observed ON/OFF current ratio and switch-on voltage changed from 9.4 x 103 and 0.90 V before annealing to 7.16 x 104 and 0.46 V after annealing, respectively. In contrast to PDFD-MXene, their blends showed a poor RRAM performance. The achieved ON/OFF current ratio and switch-on voltage were 4.4 x 102 and 1.12 V, respectively. After exposed to damp air, the PDFD- MXene-based device displayed outstanding environmental stability and could work well for at least 60 days at a humidity of 50% and a temperature of 30 degrees C. Unlike PDFD-MXene, their blends-based memory device showed a very unstable performance with increasing relative humidity.

N, S-codoped Cross-Linked Polymers for Low Switch Voltage and High Thermal Stable Nonvolatile Memory

Memory devices based on functionalized copolymers exhibiting a linear dependence of switch threshold voltage with the pendant nitro-azobenzene moiety content change

Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High Performance Flash Memory.

Novel Covalent-Organometallic Polymer for Highly Stable Nano-Resistive Switching Memories

Light-/steam-driven Polymeric Crosslinking with Porous Multistructure Pattern for Ultrastable and Fast-Speed Memory

Regulating WORM/Flash Electrical Memory Behavior of Metallopolymers Through Varying Metal Centers

Conjugated Polymer-Functionalized 2D MXene Nanosheets for Nonvolatile Memory Devices with High Environmental Stability

Nonvolatile Polymer Memory Device Based on Bistable Electrical Switching in A Thin Film of Poly(N-Vinylcarbazole) with Covalently Bonded C-60

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory.

Fluorinated Quinoxaline-Based Conjugated Polymers for High-Density Nonvolatile Memory Devices

An Electrogenerated Chemical-Oxidation-Driving Nonvolatile Plastic Memory Device with the Conjugated Polymer/Carbon Nanotube Blend

Solution-processable Poly(n-Vinylcarbazole)-covalently Grafted MoS2 Nanosheets for Nonvolatile Rewritable Memory Devices.

Resistive Switching Effect of N-doped MoS2-PVP Nanocomposites Films for Nonvolatile Memory Devices

Improved Performance of NbO<sub>x</sub> Resistive Switching Memory by In-Situ N Doping

Bistable Electrical Switching and Memory Effects in a Thin Film of Copolymer Containing Electron Donor-Acceptor Moieties and Europium Complexes.

Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility

Fabrication of Carboxymethyl Cellulose and Graphene Oxide Bio-Nanocomposites for Flexible Nonvolatile Resistive Switching Memory Devices.

Molecular Conformation-dependent Memory Effects in Non-conjugated Polymers with Pendant Carbazole Moieties

Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of N‐Vinylcarbazole and Eu‐Complexed Vinylbenzoate

Flash memory effects based on styrene/maleimiade copolymers with pendant azobenzene chromophores

Conductivity Switching and Electronic Memory Effect in Polymers with Pendant Azobenzene Chromophores