Abstract:Metal–organic framework (MOF) is an emerging important class of functional materials in the fields of information storage, wearable electronics and optoelectronic devices. The interaction of electrons or holes with MOFs is important for the systematic exploration of MOFtronics and to investigate the related structure–performance correlation. Herein, MOF flat nanosheets of copper tetrakis(4‐carboxyphenyl)porphyrin with sub‐10 nanometer scale in thickness are employed as the charge‐trapping layer in organic field‐effect floating‐gate transistor memory device fabricated by an air–liquid interfacial assembly and subsequent stamping operation. As charge trapping sites, MOF nanosheets with ultrathin nanoporous arrays significantly improve in comparison with the memory device using its counterpart ligand of tetrakis(4‐carboxyphenyl)porphyrin as the trapping elements. As compared to the reported widely applied nanofloating gate materials of gold nanoparticles, graphene, or macromolecular nanomaterials, a short pulse (≈20 ms) on the device gets a considerable memory window of ≈37.5 V at a programming voltage of ‐80 V, with a retention time longer than 104 s and good ON/OFF ratio of >103. Furthermore, the hybrid structure composed of metal and organic components endows it with electron and hole trapping capability. This work could push forward the fundamental research of organic–inorganic–hybrid electronics in future microelectronic research. The interactions of electrons or holes with metal–organic frameworks (MOFs) are important for the systematic exploration of MOFtronics and investigation of the related structure–property correlation optimization. Herein, ultrathin copper tetrakis(4‐carboxyphenyl)porphyrin nanosheets exhibit good electron and hole trapping capability superior to its ligand tetrakis(4‐carboxyphenyl)porphyrin and ranks high in current nanofloating gate materials.

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device Via Direct Laser-Writing

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Ferroelectric-carbon Nanotube Memory Devices.

Highly Flexible Non-Volatile Resistive Memory Devices Based on ZnO Nanoparticle/Graphene Heterostructures Embedded in Poly(methyl methacrylate)

Carbon nanomaterials for non-volatile memories

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

Novel Memory Devices Based on Nanostructured Carbon Materials

Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure

Preparation of MoS₂-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes.

Ultrathin Metal–Organic Framework Nanosheets as Nano‐Floating‐Gate for High Performance Transistor Memory Device

A Facile Approach to Synthesize an Oxo-Functionalized Graphene/polymer Composite for Low-Voltage Operating Memory Devices

Ferroelectric Domain Dynamics and Stability in Graphene Oxide-P(vdf-trfe) Multilayer Films for Ultra-High-density Memory Application

Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices

Protonated g-C3N4-based nonvolatile memories with good environmental robustness assisted by boron nitride

Flexible Metal‐Free Memory Electronic Made of Π‐conjugation‐interrupted Hyperbranched Polymer Switch and Reduced Graphene Oxide Electrodes

Highly Entangled K0.5v2o5 Superlong Nanobelt Membranes For Flexible Nonvolatile Memory Devices

Toward All-Carbon Electronics: Fabrication of Graphene-Based Flexible Electronic Circuits and Memory Cards Using Maskless Laser Direct Writing.

Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Oxide Resistive Memory with Functionalized Graphene As Built-In Selector Element

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications.