Abstract:The development of disruptive artificial neural networks (ANNs) endowed with brain-inspired neuromorphic capabilities is emerging as a promising solution to deal with the challenges of the artificial intelligence era. The fabrication of robust and accurate ANNs is strongly associated with the design of new electronic devices. The intriguing properties of memristors render them suitable as building blocks within ANNs. However, the impact of the operating electrodes on the dynamics of the switching process and the relaxation effect remains elusive. It is, thus, apparent that a deep understanding of the underlying electrochemical metallization mechanism that affects the formation of the conductive filament is of great importance. Along these lines, in this work, the impact of various materials as inert electrodes (Pt NPs, ITO, n++ Si, TiN, and W) on tuning the switching mode of low power SiO2-based conductive bridge random access memory devices was systematically investigated. A comprehensive model was applied to interpret the threshold and bipolar switching patterns and shed light on the respective physical mechanisms. The model incorporated the different coefficients of thermal conductivity of the various materials and attempted to associate them with the Soret coefficient and the activation energy of thermophoresis to interpret the experimental outcomes. Our work provides valuable insight for the realization of memristive devices with tunable properties, which can be directly leveraged for implementing a variety of neuromorphic functionalities, such as synaptic plasticity and spike generation.

Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory

Formation of SnOx Nanoparticles at the AIDCN/ITO Interface in Organic Cross-Point Memory Devices

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

Ferroelectric-carbon Nanotube Memory Devices.

Modulation on Interfacial States for the Improved Charge Storage Performance in HfO2 Matrix Embedded CoO Nanoparticles-Based Memory Capacitors

Memory Behaviors Based on ITO/Graphene Oxide/Al Structure

Barrier Polarity Reversal Based on Interfacial Modification of Au Nanoparticles for Nonvolatile Multilevel Memory and Optoelectronic Synapses

Pd Nanocrystals-Embedded TiO<sub>2</sub> Film Sandwiched Between Al<sub>2</sub>O<sub>3</sub> Layers for Nonvolatile Memory Applications

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

A Hybrid Method for Fabrication of Au Nanocrystals Nonvolatile Memory

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices

Low-cost Fabrication and Polar-Dependent Switching Uniformity of Memory Devices Using Alumina Interfacial Layer and Ag Nanoparticle Monolayer

Electrochemical Fabrication of A Memory Device Based on Conducting Polymer Nanocomposites

Control over the interface properties of carbon nanotube-based optoelectronic memory devices

Effects of Interface Reaction on the Performance of Alox/Wox Bilayer Resistive Switching Memory

Effect Of Control Oxide On The Performance Of Nanocrystalline Silicon Based Double-Barrier Floating Gate Memory Structure

Langmuir−Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures

Impact of Au Nanocrystal Size and Inter-Nanocrystal Distance on the Storage Characteristics of Memory Devices

Nanostructured interfacial dipole layers for high-performance and highly stable nonvolatile organic field-effect transistor memory

Solid-Ionic Memory in a van der Waals Heterostructure